国家/地区 中国（14）
IPC部 C（14）
IPC大类 C30（14） C01（5） C23（2）
IPC小类 C30B（14）
IPC C30B029/02（14）
发明人 CHAI Z（2） HAN D（2） HAO Y（2）
LI X（2） LIN S（2） NING J（2）
WANG C（2） WANG D（2） WANG L（2）
YAN Y（2） YU G（2） ZHANG J（2）
公开年 2013（14）
申请年 2013（8）  2012（5） 
专利权人 HANGZHOU GEL.（2） UNIV NANCHAN.（2） UNIV XIDIAN（2）

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L

Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.

WANG C, WANG L

Preparing single crystal graphene, by depositing metallic film on mica substrate, vacuumizing deposited film, introducing hydrogen gas and argon, raising temperature, and continuously introducing methane gas with hydrogen gas and argon.

LIANG S, CAO J, FENG J, QI J, ZHANG L

Low temperature chemical vapor deposition for graphene film involves doping surface of a flat metal substrate with a chemical agent in a protective atmosphere, annealing while substrate is in contact with carbon source, heating and cooling.

HUANG M

Preparation of single-crystal graphene comprises affixing graphite crystal to base area, coating layer with nickel and/or copper alloys, heating, annealing, cooling, immersing in iron chloride solution and removing metal layer and carbon.

LI X, LIN S

Preparation of single crystal graphene involves adhering graphene to silicon/silicon dioxide composite layer and then transferring to substrate, providing substrate into reaction chamber and supplying carbon source gas and reducing gas.

LIN S, LI X

Preparation of single-crystal graphene used in field of e.g. effect electronic device, involves heating insulating material in non-oxidizing atmosphere, providing carbon source and hydrogen in reaction system and cooling.

GUO Y, LUO B, CHEN J, WU B, HUANG L, GENG D, LIU Y, XUE Y, YU G

Preparation of self-assembly growth micro-nano-scale graphene used as electrode by carrying out electron beam evaporation of transition metal film on substrate, forming transition metal particles and carrying out chemical vapor deposition.

WANG D, ZHANG J, CHAI Z, HAO Y, HAN D, YAN Y, NING J