国家/地区 中国（14）
IPC部 C（14）
IPC大类 C30（14） H01（12） C23（4）
IPC小类 C30B（14）
IPC C30B029/40（14）
发明人 DING T（2） FENG H（2） LI P（2）
PAN Y（2） TANG J（2） WANG Y（2）
公开年 2022（7） 2021（6）
申请年 2021（14）
专利权人 CEC COMPOUND.（2） CHINESE ACAD.（2） HC SEMITEK Z.（2） UNIV PEKING（2）

Visible-near infrared wide spectrum photoelectric detector is independent device and/or integrated in circuit, and contains flexible substrate, transparent conductive electrode, active layer, p-type ohmic contact layer, upper electrode layer, and silicon nitride passivation layer.

CHEN H, WANG W, DENG Z, LI X, JIA H

Preparing two-dimensional material heterojunction device, comprises dissociating two-dimensional material, embedding electrode to substrate by spin coating, transferring dissociated two-dimensional material and forming multi-layer heterojunction structure.

LI P, YANG Q, LIN J

Method for remote epitaxial growth of nitride single crystal thin film based on ferroelectric material substrate comprising adjusting temperature of ferroelectric material substrate, and cooling ferroelectric material substrate.

XU K, WANG J, WANG Y, XU Y, QU Y

Preparation of gallium nitride epitaxial structure by providing a silicon carbide substrate, pre-processing, growing a graphene film, growing diamond film, growing aluminum nitride polycrystalline film, and annealing.

PAN Y, FENG H, TANG J

Preparing epitaxial structure for gallium nitride-based radio frequency device, comprises e.g. performing surface cleaning treatment, annealing the silicon carbide substrate to produce graphene film, growing indium-galliun-nitride-aluminum-gallium-nitride barrier layer.

PAN Y, FENG H, TANG J

Preparing indium-phosphate thin film based on gallium-arsenic substrate, comprises e.g. growing gallium-arsenic buffer layer on gallium-arsenic substrate, preparing composite buffer layer on gallium-arsenic buffer layer, forming composite buffer layer and growing indium-phosphate thin film.

JI H, LUO S, WANG Y, XU P

Graphite substrate useful for manufacturing light emitting diode epitaxial wafer in semiconductor field, comprises graphite disc and multiple annular isolation layer, where surface of graphite disc is provided with multiple grooves for containing epitaxial wafer.

LI P, LU X, XIAO Y, GUO B, DING T, GE Y

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Method for growing gallium nitride single crystal by high temperature heat treatment assisted two-dimensional coating mask substrate, involves adding polyvinylpyrrolidone to adjust viscosity of nanosheet solution, using spin coater to adsorb substrate, growing single crystals on mask substrates.

LV H, WU Y, HAO X, HU H, SHAO Y, ZHANG B

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B