国家/地区 欧洲专利局（EPO）（11）
IPC部 C（11）
IPC大类 H01（11） C23（7） C01（4）
B22（3） B82（3） C09（3）
B01（2） C25（2） C30（2）
G03（2）
IPC小类 H01L（11） C23C（7） C01B（4）
B22F（3） B82Y（3） H01M（3）
B01J（2） C01G（2） C09K（2）
C25D（2） C30B（2） G03F（2）
IPC H01L021/02（11）
发明人 FIMLAND B M（2） GABEN F（2） MUNSHI M（2）
WEMAN H（2）
公开年 2021（11）
申请年 2020（8）  2019（2） 
专利权人 CRAYONANO AS（2） SAMSUNG ELEC.（2）

Manufacture of lithium-ion battery used for e.g. phone and laptop, involves e.g. depositing dense layer comprising anode, cathode and/or electrolyte, by supplying substrate and suspension of non-agglomerated nanoparticles of material having preset size, and performing densification of dried layer.

GABEN F

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Seed layer for inducing nucleation to form layer of material used for fabricating semiconducting devices, comprises layer of two-dimensional monolayer amorphous material with disordered atomic structure to form electric potential wells for bonding adatoms to seed layer by van der Waals interaction.

OEZYILMAZ B, TOH C T, ABIDI I H, OJIYLMAZ B, TOH C, ZHUO Z, OZYILMAZ B

Method for photon induced material deposition, involves mixing first and second solutions to form reagent on substrate, and focusing light source on reagent to form mechanically rigid deposition in focus of light source.

YANG S, XIA K, HUNG S F, CHEN Y, HONG Z

Depositing layer of carbon nanostructures on substrate by providing substrate in processing chamber, providing processing gas in processing chamber having carbon monoxide gas and creating and sustaining gaseous plasma in processing chamber.

ZAPLOTNIK R, MOZETIC M, PRIMC G, VESEL A, HORI M, ODA O

Producing graphene sensor element used for analyzing gas sample, by forming graphene layer on growth substrate, applying fluoropolymer coating layer, removing substrate, transferring onto substrate, and removing fluoropolymer coating layer.

SHERWOOD G J, NELSON J T, SU Q, BUHLMANN P P J, ZHEN X, KOESTER S J

Composition used for fabricating semiconductor structure on semiconductor device for removing metal-containing layer of pellicle structure, comprises water, oxidizing agent(s), and acid(s).

CHEN C, CHANG C, LEE Y, LIU W D, WINDOW C, LEE W, LU W, LIU W, LI Y, ZHANG Z, CHEN Z

Composition of matter for light-emitting diode or photodetector device, has nanowires or nanopyramids that are epitaxially grown on graphene layer, and graphene layer is directly supported on crystalline substrate.

MUNSHI M, WEMAN H, FIMLAND B M, PIMLANDBOERNOBEEM

Carbon abrasive used to polish slurry, and manufacture semiconductor device contains carbon nanoparticle, and positively charged polymer, and/or positively charged oligomer disposed on surface of carbon nanoparticle.

TAKAI K, KIM D Y, KIM D

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B