国家/地区 日本（12）
IPC部 B（12）
IPC大类 B01（12）
IPC小类 B01J（12）
IPC C01B032/186（12）
发明人 IFUKU R（2） MATSUMOTO T（2） ZHANG X（2）
公开年 2018（2）
申请年 2010（2）  2014（2） 
专利权人 TOKYO ELECTR.（2）

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Graphene ball conductive adhesive preparation by preparing polymer microsphere using monomer mixture, performing chemical vapor deposition to grow graphene on microsphere surface, and dispersing graphene ball into epoxy resin glue system.

CHEN Y, LI J, LI Y, ZHANG X, LEE Y

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Copper foil for manufacturing graphene, has specified sum total of oxides and sulfides having diameter of below preset value before heating under hydrogen and argon-containing atmosphere.

CHIBA Y, YAMAJI T, YOSHIHIRO C, TATSUYA Y, CHIBA G

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S