国家/地区 日本（12）
IPC部 C（12）
IPC大类 C01（12） H01（6） B32（4）
C23（3） B82（2）
IPC小类 C01B（12）
IPC C01B031/02（12）
发明人 SATO M（12）
公开年 2013（4） 2014（4） 2012（3）
申请年 2012（5）  2010（2）  2011（2）  2013（2） 
专利权人 FUJI ELECTRI.（8） DOKURITSU GY.（2） FUJITSU LTD（2） ULVAC INC（2）

Carbon electrically conductive structure used in semiconductor device e.g. semiconductor memory, has first graphene whose edge is electrically connected with edge of second graphene.

SATO M

Laminate used for field effect transistor, has mica, self-assembled film formed on mica, and graphene film formed on self-assembled film in which each of molecules has hydrophobic principal chain.

FUJII TAKESHI, SATO MARIKO, FUJII T, SATO M

Manufacture of laminate used for thin film solar cell, involves smoothing uneven surface of substrate by forming resin layer in uneven surface, and laminating substrate and graphene film which are bonding together, through resin layer.

FUJII K, SATO M

Wiring structure used for semiconductor device e.g. large scale integration, comprises carbon nanotubes and graphene, which are connected electrically through metal block.

SATO S, KONDO D, SATO M, NIHEI M, KONDO T

Manufacture of graphene film used as transparent conductive film, involves growing graphene on substrate, contacting graphene with another substrate, removing substrate, and stretching graphene and fixing laminated material.

FUJII K, SATO M

Formation method for transparent conductive film, involves forming transparent conductive film comprising sheet-like graphene, by sintering coated graphene ink to base-material surface at predetermined temperature.

TAKEI H, SAKIO S, SATO M, HIRAOKA K, IKEDA S, SAKAO Y, OTAKE F

Manufacture of graphene involves growing graphene by supplying carbon to transition metal substrate, forming resin support film, removing substrate by etching, bonding graphene on support film and removing support film.

FUJII T, SATO M

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Manufacture of graphene involves accommodating organic solvent in reaction container, applying pulse voltage between a pair of electrodes, immersing in organic solvent, vaporizing organic solvent, and generating glow discharge in bubble.

TAKEI H, SAKIO S, SATO M, HIRAOKA K

Manufacture of graphene for e.g. gas sensor, involves heating transition-metal single-crystal thin film formed on monocrystal substrate at epitaxial, and supplying carbon on surface of transition metal.

FUJII K, SATO M