国家/地区 台湾（21）
IPC部 C（21）
IPC大类 C23（21）
IPC小类 C23C（21） C01B（13） H01L（13）
C30B（7） B82Y（6） B32B（4）
H01B（3） H01J（3） B01J（2）
B82B（2） C03C（2） C04B（2）
IPC C23C016/02（21）
发明人 BINDER A（2） LIU X（2） NARKEVICIUTE I（2）
SONG Z（2） TZENG Y（2） TZENG Y H（2）
VARADARAJAN B N（2） WEBER N（2） XIAO D（2）
公开年 2013（4） 2016（4） 2017（3） 2021（3） 2022（3） 2015（2） 2018（2）
申请年 2016（4）  2012（3）  2015（3）  2021（3）  2013（2）  2017（2）  2020（2） 
专利权人 BASF SE（2） CORNING INC（2） LAM RES CORP（2） UNIV NAT CHE.（2）
ZING SEMICON.（2）

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Tantalum carbide-coated carbon material for e.g., LED manufacturing equipment, comprises a carbon substrate, and a tantalum carbide coating layer formed on the carbon substrate.

JO D W, CAO D, WAN J, CHO D W

Carrier substrate for transferring transfer layer from carrier substrate to product substrate, comprises carrier base substrate, protective layer, and transfer layer grown on protective layer.

BURGGRAF J, JUERGEN B

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Protective layer for use in display screen, has layer main body provided with sapphire substrate, where graphene film is coated on sapphire substrate.

XIAO D

Method for manufacturing graphene field-effect transistor, involves forming graphene layer on surface of glass substrate, and forming high dielectric constant material layer on surface of graphene layer.

XIAO D

Article used in electronic device, comprises substrate, and coating layer comprising three-dimensional construction of graphene structure having hollow core of spherical structure with specified average surface area and average diameter.

LI C, LIU X, SONG Z, SONI K K