国家/地区 台湾（64）
IPC部 C（64）
IPC大类 C23（64）
IPC小类 C23C（64）
IPC C23C016/26（64）
发明人 FAN S（7） JIANG K（7） LIN X（6）
FAN F Y（5） XIAO L（5） CHIU P（4）
GUINEY I（4） LIN X Y（4） NARKEVICIUTE I（4）
SHARMA K（4） THOMAS S（4） VARADARAJAN B N（4）
CHIU P W（3） HUANG K（3） LIU P（3）
公开年 2021（11） 2016（8） 2022（8） 2015（7） 2012（6） 2013（6） 2017（6） 2018（4） 2011（3） 2014（2）
申请年 2021（9）  2014（7）  2016（7）  2020（7）  2011（6）  2015（6）  2012（5）  2013（5）  2022（4）  2017（3）  2010（2） 
专利权人 HON HAI PREC.（7） HONGFUJIN PR.（7） UNIV TSINGHU.（7） APPLIED MATE.（5）
LAM RES CORP（5） CORNING INC（4） PARAGRAF LTD（4） BASF SE（3）
IND TECHNOLO.（3） AIXTRON SE（2） CALIFORNIA I.（2） CHIU P（2）
EV GROUP THA.（2） HUANG K（2） INT BUSINESS.（2） MAX PLANCK G.（2）
TAIWAN SEMIC.（2） TOKYO ELECTR.（2） UNIV NAT CHE.（2） UNIV NAT TSI.（2）

Forming dual damascene structure on semiconductor substrate, involves selectively depositing carbon layer on exposed metal surface.

PARBATANI A, VAN SCHRAVENDIJK B J, VARADARAJAN B N, NARKEVICIUTE I, SRINIVASAN E, SHARMA K, KNARR R, SCHMITZ S, RAMANAN V, NOGAMI T, NGUYEN S V, HUANG H, SHOBHA H K, LI J, PEETHELA C B, EDELSTEIN D C

Processing substrates by providing semiconductor substrate, which comprises metal layer formed in dielectric layer and barrier layer between metal layer and dielectric layer, depositing graphene on exposed metal surface, depositing inhibitor layer and depositing dielectric material.

HAUSMANN D M, RAMNANI P G, SHARMA K, LEMAIRE P C, MAHOROWALA A P

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Porous silicon-carbon composite used for negative electrode active material for lithium secondary battery, comprises silicon particles, magnesium fluoride, and carbon.

LIM J C, LEE J, JEON Y M, LIM S W, PARK J G, LEE H S, LIM H H, NAM S J, LEE E, LIM J, HYUN L J, IMSUNGWOO, HEE L, JIN N, PARK S

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Selective deposition on dielectric layer comprises providing semiconductor substrate, selectively depositing graphene on exposed metal surface of metal layer of substrate, and selective depositing dielectrically-deposited material on layer.

NARKEVICIUTE I, VARADARAJAN B N, SHARMA K, NARKEBICHUDDER I