国家/地区 台湾（12）
IPC部 B（12）
IPC大类 B01（12）
IPC小类 B01J（12）
IPC C01B031/04（9） C23C016/26（6） C01B032/186（5）
B01J023/72（4） B01J037/02（4） B82Y030/00（4）
B82Y040/00（4） C01B031/02（4） B01J019/08（3）
B01J023/75（2） B01J035/00（2） B05D005/12（2）
C01B032/182（2） C01B032/194（2） C23C016/02（2）
发明人 MATSUMOTO T（2）
公开年 2013（3） 2015（2）
申请年 2011（2）  2012（2）  2013（2）  2014（2） 
专利权人 JX NIPPON MI.（2） NIPPON MININ.（2） TOKYO ELECTR.（2）

Manufacture of dense layer of electrochemical device, involves providing substrate and suspension of non-agglomerated nanoparticles of material having specific particle size distribution, depositing layer on substrate, drying and densifying.

GABEN F

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Graphene-manufacturing apparatus includes reaction chamber defining reaction space, mold unit including mold body and outer surface, and driving unit connected to mold unit.

HUANG K, HUANG G

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Method of preparing graphene from methane using catalyst in a reactive furnace.

CHEN M, CHEN B, KOO H, CHEN B F, KOO H S

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Graphene manufacturing system, useful for growing graphene layers on insulated surface of work piece, comprises furnace body having working chamber, catalyst source, hydrogen source, and carbon feedstock source.

TENG P, CHIU P, LU C, TENG P Y, CHIU P W, LU C C

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Copper foil for manufacture of graphene for e.g. transparent electrode, conductive thin film of display element, mercury-free fluorescent lamp and carrier of drug delivery system, includes specified amount of preset plane on surface.

KOBIKI T, SAKAGUCHI K, KOHIKI M

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T