国家/地区 台湾（19）
IPC部 C（19）
IPC大类 C30（19）
IPC小类 C30B（19）
IPC C30B029/02（11） H01L021/02（10） C30B025/18（8）
H01L021/20（8） C01B031/02（7） C01B031/04（7）
B82Y030/00（5） B82Y040/00（5） H01L029/16（5）
C01B032/182（4） C01B032/186（4） C23C016/26（4）
C23C016/34（4） C30B025/04（4） H01L021/205（4）
发明人 FAN S（3） VEERASAMY V（3） VEERASAMY V S（3）
WEI Y（3） BERRY V（2） DIXON S（2）
FAN F Y（2） GI Y（2） GUINEY I（2）
SEACRIST M R（2）
公开年 2013（4） 2011（3） 2014（3） 2022（3）
申请年 2012（5）  2013（3）  2009（2）  2022（2） 
专利权人 GUARDIAN GLA.（3） GUARDIAN IND（3） GUARDIAN IND.（3） HON HAI PREC.（3）
HONGFUJIN PR.（3） UNIV TSINGHU.（3） MAX PLANCK G.（2） PARAGRAF LTD（2）
SUNEDISON SE.（2）

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Wafer used to chemical vapor deposition growth of uniform graphene comprises planar silicon substrate, insulating layer provided across silicon substrate, and barrier layer provided across the insulating layer.

DIXON S, KAINTH J, JAGT R, GUINEY I, BADCOCK T J

Forming a graphene layer structure used in Hall effect sensor, involves providing growth substrate having growth surface, and forming graphene layer structure on growth surface by chemical vapor deposition method, where growth surface is formed of material consisting of e.g. magnesium aluminate.

GRIFFIN R M, THOMAS S, GUINEY I, DIXON S

Composition of article used for solar cell, comprises sapphire, silicon, gallium oxide or specific group semiconductor substrate, and intermediate specific group semiconductor layer, graphene layer, holes, and nanowires or nanopyramids.

MUNSHI M, WEMAN H, DHEERAJ D L, FIMLAND B M, VIGEN L, BARRIET D, PIMLANDBJOERNOBEEM, WIGGENREIDULPH, DAVID B

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Semiconductor structure having multiple-porous graphene layer, includes gallium nitride layer formed on multiple-porous graphene layer which is formed on semiconductor substrate.

LAI C, TAN C, SINGH P, LAI C S

Formation of multilayer structure, involves epitaxially depositing graphene layer on layer comprising cobalt that is in contact with dielectric layer and has semiconductor wafer with front wafer surface contacting dielectric layer.

BERRY V, BEHURA S, NGUYEN P, SEACRIST M R

Preparation of graphene used as exciting material, involves thermally pretreating substrate in chemical deposition chamber using gaseous or supercritical oxidant, and preparing graphene on pre-treated surface by chemical deposition.

STRUDWICK A, SCHWAB M G, MUELLEN K, SACHDEV H, WEBER N, BINDER A, MULLEN K, STRUDWICK A J, WEBER N E

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Deposition mask for forming patterned deposition material of e.g. organic light emitting display device, has carbon layer formed on surfaces of body portion and including carbon graphene, where openings are penetrated through surfaces.

HAN J