国家/地区 美国（162）
IPC部 C（162）
IPC大类 C01（162）
IPC小类 C01B（162） H01L（162） B82Y（68）
C23C（57） B32B（30） B01J（17）
H01B（17） C30B（16） B82B（13）
B05D（12） H01J（8） C01G（7）
C23F（6） C25D（6） C07C（5）
IPC H01L021/02（162）
发明人 SHIN H（12） SHIN H J（10） LEE C（7）
LEE C S（7） SHIN K（7） SHIN K W（7）
BYUN K（5） BYUN K E（5） KIM Y（5）
LEE J（5） MITSUHASHI F（5） SATO S（5）
TATENO Y（5） CHO S（4） CHO S M（4）
公开年 2013（22） 2017（21） 2014（19） 2012（18） 2015（16） 2016（11） 2021（11） 2022（10） 2018（9） 2020（7） 2023（7） 2010（4） 2011（4） 2019（2）
申请年 2013（25）  2015（21）  2011（15）  2012（15）  2016（15）  2017（12）  2014（11）  2021（11）  2022（11）  2020（7）  2009（5）  2018（5）  2019（5）  2010（4） 
专利权人 SAMSUNG ELEC.（25） FUJITSU LTD（8） SUMITOMO ELE.（5） UNIV CALIFOR.（5）
UNIV SUNGKYU.（5） HANWHA TECHW.（4） INT BUSINESS.（4） TOKYO ELECTR.（4）
TOSHIBA KK（4） APPLIED MATE.（3） CALIFORNIA I.（3） COMMISSARIAT.（3）
EMPIRE TECHN.（3） GRAPHENEA SA（3） INFINEON TEC.（3） NAT INST ADV.（3）
SHIN H（3） SUNEDISON SE.（3） TAIWAN SEMIC.（3） UNIV NORTH T.（3）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R

Graphene interconnect structure useful for electronic device comprises first oxide dielectric layer including porous silicon oxide, or amorphous boron nitride, second oxide dielectric layer including aluminum oxide and graphene layer.

KIM C, BYUN K E, SHIN K W, LEE C S, BAEKWON P, PARK B, LEE C, SHIN K, BYUN K

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing semiconductor for producing high quality devices and structures, involves delivering carbon-containing precursor and hydrogen-containing precursor to processing region of semiconductor processing chamber, forming layer of graphene on substrate positioned in processing region of chamber.

INGLE N K, MALLICK A B, SINGHA R S, WANG J

Patterned graphene film for use in electronics and mechanics, has patterned substrate comprising patterned fine-grained metal or alloy layer with multiple discrete regions which structure of metal is selectively changed to amorphous.

ZAKAR E S

Synthesizing self-assembled mixed-dimensional heterostructure used in composition, involves depositing boron on substrate to grow borophene on it at substrate temperature in ultrahigh vacuum chamber, depositing orderly 4,4-dibromo-p-terphenyl on borophene grown substrate at room temperature.

AKLILE E B, LIU X, LI Q, HERSAM M C

Transistor for semiconductor device, has channel layer that comprises graphene layer and hexagonal boron nitride sheets dispersed in graphene layer and arrangement directions of hexagonal boron nitride sheets that are aligned and source/drain region next to gate stack that is obtained.

CHEN Z, CHU Z, CHEN T, CHUU C

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Performing low-temperature direct growth method of multilayer graphene for manufacturing pellicle for extreme ultraviolet lithography, involves forming etch stopper on substrate, and forming seed layer on etch stopper, where seed layer is selected from boron nitride, or boron carbon nitride.

KIM H Y, CHO J W, KIM H M, KIM S G, KIM H K, KIM H, MI K H, KIM S K