国家/地区 世界知识产权组织（25）
IPC部 C（25）
IPC大类 C01（25）
IPC小类 C01B（25）
IPC H01J037/32（11） C01B031/02（8） C01B031/04（7）
C01B032/194（7） B82Y030/00（6） B82Y040/00（6）
C01B032/186（6） C23C016/26（6） H01J009/02（5）
H01J037/20（5） H01L021/02（5） B01J019/08（4）
B01J019/12（4） C23C016/02（4） H01L021/285（4）
发明人 ANZELMO B H（2） DINH H（2） HARUYASU A（2）
HIEU D（2） KHE N（2） NGUYEN K C（2）
RUSSO C（2） STOWELL M W（2） TSUYOSHI I（2）
公开年 2021（7） 2013（4） 2022（3） 2023（3） 2015（2） 2020（2）
申请年 2020（7）  2021（4）  2013（3）  2019（2）  2022（2） 
专利权人 APPLIED MATE.（2） CALIFORNIA I.（2） DINH H（2） K TUBE TECHN.（2）
LYTEN INC（2） NGUYEN K C（2） UK RES INNO.（2） UNIV OSAKA（2）

Depositing graphene or graphene oxide onto substrate from gaseous source of carbon precursor involves using plasma-enhanced chemical vapor deposition method, where carbon precursor consists of ethylene and the process is carried out in absence of carrier gas.

JOUIAD M, EL MARSSI M, LEJEUNE M

Graphene grid used for structural analysis of substance e.g. beta-galactosidase, vacuolar-type adenosine triphosphatase and ferritin, using cryo-electron microscope, has structure in which functional group containing silicon atom and/or phosphorus atom are introduced on graphene surface.

HARUYASU A, MAIKO M, TSUYOSHI I

Device for producing graphene layer, has one electrode which is connected to positive pole of voltage source, and other electrode that is connected to negative pole and is provided for carbon ions accumulate in graphene attachment region so as to form graphene layer.

KREISCHER U

Depositing graphene layer on substrate in plasma enhanced chemical vapor deposition of graphene at low temperatures, involves providing substrate within modular microwave plasma chamber, and flowing carbon source and hydrogen source into modular microwave plasma chamber.

KRAUS P A, NGUYEN H, MEBARKI B, WANG C, VALENCIA C, CHUA T C

Processing semiconductor by generating plasma of carbon- and hydrogen-containing precursors, forming layer of graphene on substrate, and halting flow of carbon-containing precursor while maintaining plasma with hydrogen-containing precursor.

INGLE N K, MALLICK A B, SINGHA R S, WANG J, ROY S S

Graphene grid used as cryo-electron microscope grid for structural analysis of target substance e.g. protein, has structure in which functional group is introduced into surface of graphene.

TSUYOSHI I, HARUYASU A, KEI O, KEIICHI N, TAKAYUKI K, FUMIAKI M, JUNSO F, SHOTA K, KUMANO S, FUJITA J, MAKINO F, KATO T, NAMBA K, OHKUBO K, ASAHARA H, INOUE G

Method for producing carbon nanotube (CNT) paste by carbon nanotube paste emitter in X-ray tube device, involves producing carbon nanotube paste, carbon nanotube powder, graphite nanoparticles, dispersing agent and distilled water are mixed.

LEE C J, GO H B, LEE S H, GO H, HUN L S

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

Reactor system for producing carbon-containing powder, has microwave energy source, control circuit having output to generate control signal to adjust pulse frequency of microwave energy, voltage generator, and field-enhancing waveguide.

STOWELL M W, PHAM T V, ANZELMO B H, RISO T, RIESLE T, FAN D