国家/地区 美国（34） 中国（30） 韩国（23） 日本（10） 世界知识产权组织（10） 德国（5） 欧洲专利局（EPO）（4） 英国（3） 台湾（2）
IPC部 H（63） B（22） C（7）
G（3）
IPC大类 H01（63） B82（21） C01（7）
B32（2） C23（2） G11（2）
H03（2）
IPC小类 H01L（63） B82Y（20） C01B（7）
B82B（3） B32B（2） C23C（2）
G11C（2） H01B（2）
IPC H01L029/78（63）
发明人 BAO J（4） LIN Y（4） LIU X（4）
MA Z（4） WU Y（4） ZHANG C（4）
ZHANG P（4） ZHUANG Y（4） CHUNG H（3）
CHUNG H J（3） JUNG H（3） LEE C（3）
LEE C S（3） LEE J H（3） LV H（3）
公开年 2013（36） 2012（16） 2014（11）
申请年 2012（63）
专利权人 INT BUSINESS.（12） SAMSUNG ELEC.（11） UNIV XIDIAN（4） GLOBALFOUNDR.（3）
INST MICROEL.（3） UNIV SUNGKYU.（3） UNIV TSINGHU.（3） BEIJING ZHON.（2）
KELBER J（2） KOREA ADV IN.（2） KOREA ADVANC.（2） QUANTUM DEVI.（2）
UNIV PEKING（2）

Method of transferring graphene involves forming graphene layer on substrate including semiconductor catalyst and forming thin film on graphene layer.

CHOI J Y, LEE J H, WHANG D M

Insulation gate FET, has graphene conductive layer formed with gate oxide layer and semi-conductor layer, where semi-conductor layer is formed with channel area and cell area.

ZHU W, HU A, LU S, ZHU Y

Fabrication method of semiconducting device such as transistor, involves forming graphene sheet, source and drain on sheet, and slot in graphene sheet, and applying etchant to substrate through slot formed in graphene.

FARMER D B, FRANKLIN A D, SMITH J T

Method for forming graphene liner and capping layer on conductive line/via of e.g. application specific integrated circuit device, involves performing chemical mechanical polishing process to remove excess amounts of copper-based material.

RYAN E T, KRIVOKAPIC Z, ZHANG X, WITT C, HE M, ZHAO L, WURTH C

Variable energy graphene tunneling transistor for use in electric component, has gate electrode, which is formed in lower portion of secondary insulation layer and drain electrode is provided in upper portion of primary insulation layer.

CHOI J W

Graphene-based electromechanical switch, has flexible conductive element separated from material by gap, where gap is sized to create negative threshold voltage at gate material for opening circuit.

GUO D, HAN S, LIU F, WONG K K H, YUAN J

Electrical characteristic control unit for controlling electronic properties of graphene, comprises field effect transistor that is connected with silicon substrate, in which zinc oxide microwire is connected with gate electrode.

KIM S J, THIYAGARAJAN K

Method for manufacturing graphene nano array and field-effect transistor including graphene nano array, involves forming graphene nano array on protective layer etched along nanotube pattern and graphene sheet, and substrate is prepared.

JUNG G Y, PARK Y S

FinFET device, used in e.g. static RAM device, comprises gate insulation material layer, gate electrode comprised of graphene and positioned on insulation material layer around portion of fin, and insulating material formed on electrode.

KRIVOKAPIC Z, SAHU B

Manufacture of field effect transistor involves arranging pattern-forming fixture on substrate on which graphene is formed, generating evaporation-induced self assembly, forming graphene patterns, dielectric layer and gate electrode.

YANG W S, KIM H K, KIM T Y, KWON S W, KIM Y N, PARK W K, JANG A R, SHIN H S, YOON D H, SUH K S