国家/地区 日本（19）
IPC部 B（19）
IPC大类 B01（19） C01（18） H01（9）
B82（8） C23（5） B32（3）
C09（3） C22（3） B21（2）
C02（2） C08（2） C25（2）
IPC小类 B01J（19）
IPC C01B031/02（17） C01B031/04（12） B82Y040/00（8）
B82Y030/00（7） H01M004/96（4） B01J019/12（3）
B01J023/72（3） C01B032/186（3） H01M004/88（3）
H01M008/10（3） B01J023/42（2） B01J023/44（2）
B01J023/75（2） B01J023/755（2） B01J023/89（2）
发明人 CHIBA G（2） CHIBA Y（2） HASHIMOTO K（2）
KAMIYA K（2） KIM J（2） NAKANISHI S（2）
TATSUYA Y（2） YAMAJI T（2） YOSHIHIRO C（2）
公开年 2013（9） 2012（7） 2014（3）
申请年 2012（19）
专利权人 PANASONIC CO.（4） DOKURITSU GY.（2） FUJITSU LTD（2） HASHIMOTO K（2）
JAPAN SCI T.（2） JAPAN SCI TE.（2） JX NIPPON MI.（2） KAMIYA K（2）
NAKANISHI S（2） NIPPON MININ.（2） NIPPON MININ.（2）

Graphene oxide useful in graphene-polymer composite used in coating liquid, for coating steel sheet.

YOO H, KIM J, JUNG Y, YOO H J, KIM J K, JUNG Y G, KIM J S, LIU H

Manufacturing method of graphene involves growing copper single crystal film on spinel single crystal plane substrate, and growing graphene by chemical vapor deposition method with carbon-containing source gas.

NOZAWA K, YOSHII S

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacture of graphene used for manufacture of graphene junction, involves applying load to aggregated-form graphite particles, such that interlayer bonding of all graphite crystals of aggregated-form graphite particles is destroyed.

KOBAYASHI H

Preparing graphene used in e.g. memory device, comprises forming organic thin film on substrate, irradiating upper portion of organic thin film with radiation to cross-link organic thin film, and then carbonizing.

CHOI J H, JUNG C H, HWANG I T, KANG D W

Composite carbon material used for forming electrode catalyst and for fuel cell, capacitor and exhaust gas purifying catalyst, is obtained by alternately laminating graphene and carbon nanoribbon.

WANG H L, YAMAGUCHI T, TAMAKI T, OHASHI S, BALACHANDRA K

Graphene film used for manufacturing graphene device for low power consumption, has substrate, catalyst metal which is osmium arranged on substrate, and graphene arranged on catalyst metal.

TOYODA K

Carbonaceous material used for e.g. electrode catalyst, comprises graphene doped with metal atom and at least one type of nonmetallic atom chosen from nitrogen atom, boron atom, sulfur atom, and phosphorus atom.

NAKANISHI S, KAMAI R, SUZUKI Y, HASHIMOTO K, KAMIYA K

Nitrate-reduction method for water treatment and electric power generation, involves performing reductive reaction to nitrate ion and/or nitrite ion in presence of carbonaceous material including graphite, graphene and amorphous carbon.

NAKANISHI S, HASHIMOTO K, KAMIYA K

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T