国家/地区 中国（11） 世界知识产权组织（2）
IPC部 C（5） G（4） H（3）
IPC大类 G01（4） C01（3） H01（3）
IPC小类 C01B（3） G01N（3） H01L（2）
IPC C01B031/04（3） H01L021/28（2） H01L021/336（2）
H01L029/78（2）
发明人 ZHANG H（5） CHEN Z（4） WANG B（4）
XIE X（4） YU G（4） ZHANG Y（4）
DING G（3） DI Z（2） JIANG M（2）
LI X（2） SUN J（2） WANG G（2）
ZHANG M（2）
公开年 2013（11）
申请年 2013（11）
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（11）

Working electrode single-layer graphene nano-particle detecting device, has reaction chamber whose bottom surface is provided with silicon wafer, which is fixed with single graphite layer of working electrode.

JIN Q, ZHANG H, ZHAO J, JIN B, MAO H

Tunneling FET unit, has first dielectric layer arranged in graphite layer, insulating barrier layer provided with second dielectric layer that is arranged in top gate electrode, where gate electrode is connected to graphene nanometer belt.

WANG H, XIE X, TANG S, WU T, XIE H, LIU X, SONG Y, SUN Q

Method for visualizing distribution of chemical vapor deposition (CVD) of graphene fold on surface of metal substrate, involves maintaining inert gas, after completing reaction with graphene gas, and cooling cavity to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Method for observing distribution of wrinkle metal surface of substrate by chemical vapor deposition, involves oxidizing metal with graphite alkene fold, when length of oxidized graphene with substrate is placed under microscope.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Method for visually displaying chemical vapor deposition (CVD) graphite alkene defect on surface of metal substrate, involves placing oxidized CVD graphene and metal substrate together with optical display under microscope for observation.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Chemical vapor deposition of single crystal used for increasing graphene domain size, by heating substrate in chemical vapor deposition device, passing under inert gas into carbon-containing gas, reacting and cooling to room temperature.

CHEN Z, WANG B, YU G, ZHANG H, ZHANG Y

Terahertz wave generating device has direct current power supply unit which is adapted to apply high frequency direct current bias voltage on ends of graphene nanometer belt, so as to generate terahertz wave.

CAO J, WANG C

Controlling growth of number of graphene layer involves forming first nickel layer on copper substrate, injecting using ion injection method in nickel layer, annealing, introducing carbon by copper in nickel layer, reconstructing graphene.

CHEN D, DI Z, DING G, LU Z, MA J, WANG G, XIE X, ZHANG M

Making nano-sized graphene quantum dot powder used in e.g. solar photovoltaic cell by chemical co-precipitation method involves wet grinding natural crystalline flake graphite, oxidizing and conducting first intercalation and heat treatment.

DING G, JIANG M, LI X, SUN J, XIE X, XU X

Graphene modulated high-k metal gate germanium-based MOS device manufacturing method, involves forming graphene thin film on Germanium-based substrate, and forming high-k gate dielectric on surface metal electrode.

DI Z, WANG G, WANG X, ZHANG M, ZHENG X