国家/地区 中国（25）
IPC部 H（13） C（12）
IPC大类 H01（13） C01（8） C30（4）
C04（3）
IPC小类 H01L（13） C01B（8） C30B（4）
C04B（3）
IPC C01B031/04（8） H01L021/336（7） H01L029/786（7）
C04B041/50（3） C04B041/85（3） C30B025/02（3）
C30B029/02（3） H01L021/04（2）
发明人 GUO H（16） LEI T（16） ZHANG Y（16）
ZHANG C（9） HU Y（8） ZHANG K（8）
FENG Y（5） MA Z（5） WEI C（5）
WU Y（5） ZHANG P（5） ZHAO Y（5）
ZHUANG Y（5） CHAI Z（4） HAN D（4）
公开年 2013（18） 2014（7）
申请年 2013（25）
专利权人 UNIV XIDIAN（25）

Graphene far infrared ray detector for high property graphite alkenyl infrared focal plane array sensor, has graphene infrared photoelectric transistor comprising graphene quantum point comprising single or double-layer graphene thin film.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Graphene temperature sensor for use in aerospace field, has structure made of top gate electrode, alloy film, upper silicon dioxide layer, silsesquioxane, graphene layer, electrode, lower silicon dioxide layer, substrate and gate electrode.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Integrated circuit preparation method, involves growing up silicon wafer of sulfur dioxide by utilizing evaporation process, and exposing hexagonal boron nitride layer on surface of graphene containing layer by metal evaporation process.

ZHANG P, MA Z, WU Y, ZHUANG Y, FENG Y, ZHAO Y, CHEN Y

Epitaxial graphene growth and transfer on gallium nitride substrate by chemical vapor deposition and chemical etching involves placing silicon carbide substrate in metal organic chemical vapor deposition reactor and adding ammonia.

HAO Y, NING J, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Epitaxial growth method of graphene thin film used for manufacturing graphene device, involves providing substrate into reaction chamber, introducing hydrogen, providing copper, processing, then introducing hydrogen and annealing.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Metal organic chemical vapor deposition reaction chamber, useful for growing graphene, comprises heating device fixed on bracket, and source inlet and exhaust port that are located at top plate and supporting plate, respectively.

WANG D, ZHANG J, NING J, HAO Y, CHAI Z, HAN D, YAN Y

Preparation of multilayered single crystal graphene involves carrying out electrochemical polishing of copper substrate, washing, drying, placing in reaction chamber, evacuating, filling hydrogen, heating, filling methane, and heating.

SHI Y, HAO Y, WANG D, ZHANG J, CHAI Z, HAN D, YAN Y

Large-size stacked structure of graphene wafer used in e.g. silicon-based semiconductor device, is provided with single crystal graphene layer, boron nitride layer, single crystal boron nitride layer and silicon dioxide wafer substrate.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Multi-layer graphene double-grid FET for use in high frequency large power device, has transistor unit formed with multiple layers, where source and drain electrodes of transistor unit are connected together in parallel manner.

GUO C, MA Z, ZHANG P, WU Y, ZHUANG Y, XIAO Z, FENG Y, ZHAO Y

Preparation of graphene on silicon carbide substrate used for manufacturing microelectronic devices and biological sensors, involves washing silicon carbide substrate, and placing in graphene growth device with argon gas and chlorine.

GUO H, LEI T, ZHANG Y, ZHANG C, LING X