国家/地区 美国（34） 韩国（28） 欧洲专利局（EPO）（8） 中国（7） 日本（3） 世界知识产权组织（2）
IPC部 H（33） B（14） C（11）
G（5）
IPC大类 H01（33） B82（11） C01（10）
B32（5） G01（3）
IPC小类 H01L（27） B82Y（10） C01B（10）
B32B（5） H01M（5） B82B（3）
H01G（3） H01J（3） G01N（2）
H01B（2）
IPC H01L029/16（18） H01L029/78（14） H01L029/778（10）
H01L029/66（9） B82Y030/00（8） B82Y040/00（8）
H01L021/02（8） H01L021/336（8） C01B031/04（6）
H01L029/06（6） B82Y010/00（5） C01B031/02（5）
H01L029/786（5） H01M004/133（4） H01M004/587（4）
发明人 LEE J（9） LEE J H（8） PARK S（8）
CHOI J（7） LEE C（6） LEE D（6）
LEE S（6） SHIN H（6） HEO J（5）
KIM Y（5） LEE C S（5） PARK S J（5）
SHIN H J（5） CHOI J Y（4） CHUNG H（4）
公开年 2015（18） 2014（16）
申请年 2014（34）
专利权人 SAMSUNG ELECTRONICS CO LTD（34）

Graphene-metal bonding structure for semiconductor device has intermediate material layer which forms edge-contact with metal layer from boundary portions of material contained in intermediate material layer that contacts metal layer.

LEE J, SHIN H, LEE M, LEE C, LEE J H, SHIN H J, LEE M H, LEE C S, LI M

Electron-emissive element, has graphene emitter adhered on emitter supporting unit and metal mesh, insulating layer provided with gate electrode, and gate supporting unit supported with graphene gate.

PARK S, LEE D, KIM I, SUNG J, LEE C, KANG D, YU E, PARK S H, LEE D G, KIM I H, SUNG J K, LEE C S, KANG D S, YU E A

Semiconductor light emitting device for backlight unit of display device, has light emitting nanostructures which are disposed on openings of graphene layer of mask layer.

HWANG S W, KIM J W, AHN I H, CHOI S J

Graphene transistor having tunable barrier has gate insulating layer that covers portion of graphene layer, gate electrode on gate insulating layer, such that energy barrier is between semiconductor substrate and graphene layer.

PARK J, SHIM J, PARK H, LEE J, LEE J H, PARK H Y, PARK J H, SHIM J W

Method of forming multilayer graphene structure for use in e.g. nanoelectronics, involves growing graphene layer on growth substrate by removal of portion of sacrificial layer.

SUH H, JEON I, SONG Y J, WU Q, JUNG S, JEON I S, JUNG S J, SUH H S, SONG Y

Graphene device has electrodes comprising second graphene layer connected to two ends of channel comprising first graphene layer.

CHOI B, LEE E, WHANG D

Composition used for forming pattern, comprises graphene derivative including hydrophilic group, and solvent.

KIM H, PARK C H, OKAYASU T, WANG X, PAWLOWSKI G, HAMA Y, KIM H W, WANG X W, XIAOWEI W, GEORG P, YUSUKE H

Inverter e.g. vertical-type inverter, has second transistor that includes second channel unit including second graphene layer and n-type second two-dimensional (2D) semiconductor layer contacting second graphene layer.

HEO J, PARK S, SHIN H, HEO J S, PARK S J, SHIN H J

Graphene device e.g. FET, has gate electrode for applying electric field to graphene channel layer, and junction contact layers for contacting portions of channel layer, where contact layers are electrically separated from each other.

LEE J, BYUN K, SONG H, SHIN H, LEE M, YOO I, PARK S, LEE J H, BYUN K E, SONG H J, SHIN H J, LEE M H, YOO I K, PARK S J, SONG C, LI M

Graphene switching device e.g. n-type transistor has semiconductor nanowire that is connected to second electrode, graphene layer or other of multiple semiconductor nanowires.

WOO Y, WOO Y S