国家/地区 美国（39）
IPC部 C（39）
IPC大类 C23（39） C01（27） H01（24）
B01（7） B82（5） C03（5）
C30（4） B32（3） C25（3）
A61（2） B81（2） C09（2）
G01（2） G03（2）
IPC小类 C23C（39） C01B（27） H01L（14）
B01J（6） H01B（6） H01M（6）
B82Y（5） C03C（5） C30B（4）
H01G（4） B32B（3） C23F（3）
C25D（3） G01N（2） G03F（2）
IPC C23C016/26（39）
发明人 CHEN C（4） LIU X（3） BEDWORTH P V（2）
HEISE S E（2） LIPOMI D J（2） SINTON S W（2）
SONG Z（2） SWETT J L（2） TU C（2）
ZARETSKI A（2）
公开年 2017（20） 2016（14） 2018（4）
申请年 2016（39）
专利权人 CORNING INC（3） LOCKHEED MAR.（2） SAMSUNG ELEC.（2） TAIWAN SEMIC.（2）
UNIV CALIFOR.（2）

Fabricating graphene nanoribbon array for graphene nanotransistor grid manufacture by selectively seeding growth of graphene flakes on substrate, masking flake edges with insulator, etching, removing insulator, and etching electrode.

LERNER M B

Synthesis of graphene used in e.g. electronic applications, involves reacting drawn catalytic substrate with precursor gas containing hydrocarbon gas and hydrogen gas to form continuous single crystal graphene.

LIST F A, STEHLE Y Y, VLASSIOUK I V, SMIRNOV S N

Transparent electrode for display device and solar battery, has dielectric layer formed between graphene conducting layer and field-effect control layer, where field-effect control layer is provided with polar charges in working state.

QIN X, ZHANG B, ZHANG C

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Graphene pellicle method for extreme ultraviolet lithography, involves attaching carrier to graphene layer, removing substrate from first assembly, and removing first material layer from first assembly.

TU C, CHEN C

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Frontal structure, has graphene coating film formed in order to surround copper wire with rapidity thermal chemical vapor deposition process, where copper wire is extended to one-way direction.

WON D K, LIM H T, RYU J C, YUAN D, LIM H, RYU J

Method for transferring graphene sheet from copper substrate to functional substrate, involves submerging functional substrate in floating bath, and decreasing fluid level of floating bath to lower graphene sheet onto substrate.

HEISE S E, BEDWORTH P V, SWETT J L, SINTON S W

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F