国家/地区 美国（18）
IPC部 C（18）
IPC大类 H01（18） C01（15） C23（12）
B01（6） B82（4） C30（4）
B32（2） C25（2）
IPC小类 H01L（18） C01B（15） C23C（12）
B01J（5） B82Y（4） C30B（4）
B32B（2） C25D（2）
IPC H01L021/02（18）
发明人 CHO S（2） CHO S M（2） PARK C（2）
PARK C H（2） SEO S（2） SEO S A（2）
SHIN S（2） SHIN S M（2）
公开年 2017（12） 2016（5）
申请年 2016（18）
专利权人 HANWHA TECHW.（2） SAMSUNG ELEC.（2）

Fabricating graphene nanoribbon array for graphene nanotransistor grid manufacture by selectively seeding growth of graphene flakes on substrate, masking flake edges with insulator, etching, removing insulator, and etching electrode.

LERNER M B

Manufacture of porous graphene layer used for e.g. textile industries, involves carrying out chemical vapor deposition of carbon source on catalytically active substrate which catalyzes graphene formation, and forming graphene.

PARK H G, HEIGHT M, CHOI K, PARK H

Graphene wiring structure comprises multilayered graphene having laminated multiple planar polycrystal graphene sheets, and metal oxyhalide and metal halide which exist in the interlayer of planar polycrystal graphene sheets.

MIYAZAKI H, SAKAI T, KATAGIRI M, YAMAZAKI Y

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Production of layered structure involves depositing catalyst structure onto substrate top surface containing non-electroconductive material, depositing graphene structure onto catalyst structure, and partially removing catalyst structure.

LUTZ T, PURKL F, ROELVER R, ROHLFING F

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Semiconductor device, has resin material that is provided for covering semiconductor chip which is coupled onto substrate through bump electrode and that is provided for containing resin and graphene particles.

MATSUBARA Y, YOSHIHISA M

Laminated body for use in FET, has graphene film fixed on main surface of substrate portion, where film comprises atomic arrangement and exposed surface of graphene film is main surface of graphene film opposite to substrate portion.

MITSUHASHI F, ISHIZUKA T, UENO M, TSUKUDA Y, TATENO Y, SUEMITSU M, FUKIDOME H, NAGASAWA H, MIHASHI F

Preparation of functionalized graphene structure for e.g. display, involves providing organic linker on graphene layer, forming organic linker layer, providing dopant material on organic linker layer, and forming dopant layer.

SUNG M, HAN K, MO S M, HAN K S, SUNG M M