国家/地区 美国（42） 韩国（32） 中国（15） 欧洲专利局（EPO）（9） 世界知识产权组织（2）
IPC部 H（41） C（14） G（7）
B（4）
IPC大类 H01（40） C23（9） H10（8）
C01（7） B23（2） C09（2）
G11（2） H04（2）
IPC小类 H01L（38） C23C（9） H10B（8）
C01B（7） C09K（2） G11C（2）
H01M（2） H01S（2）
IPC H01L021/02（14） H01L029/423（8） H01L029/16（7）
H01L029/66（7） H01L029/786（7） C23C016/26（6）
H01L021/768（6） H01L029/417（6） H01L029/78（6）
H01L021/285（5） H01L029/06（5） H01L029/40（5）
H01L029/45（5） H01L029/51（5） H10B012/00（5）
发明人 BYUN K（11） SHIN H（11） SHIN K（11）
BYUN K E（10） KIM S（10） LEE C（9）
LEE C S（9） SHIN K W（9） KIM C（7）
KIM H（7） LEE J（6） JIN C（5）
KIM K（5） LEE E（5） LI C（5）
公开年 2023（35） 2022（8）
申请年 2022（43）
专利权人 SAMSUNG ELECTRONICS CO LTD（43）

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Semiconductor device comprises substrate, first heat dissipation layer provided on substrate and extending in first direction, and metal layer provided on first heat dissipation layer and extending in first direction, and first heat dissipation layer has structure made of carbon atoms.

JEONG M H, RHO H, LEE S H, RHO H K, CHUNG M H

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Micro light emitting semiconductor device for display apparatus, has first and second semiconductor layers, light emitting layer and color conversion layer with porous layer having quantum dot, where doping-type of second semiconductor layer is different from doping-type of color conversion layer.

HWANG J, PARK J, HWANG K, KIM D, HWANG K W, HWANG J S, JIN D

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Nonvolatile memory device for neuromorphic apparatus, has gate insulating layer extending in first direction between channel layer and gate electrodes, where each of gate electrodes includes metal-doped graphene.

SHIN K, KIM C, PARK S, KIM H, BYUN K, YUN D, LEE C, LI C, YIN T, PIAO S, JIN C, SHIN K W, PARK S H, KIMHYUNWOO, BYUN K E, JIN Y D, LEE C S

Epitaxy structure comprises substrate having upper surface, upper surface having single crystal structure, two-dimensional material layer provided on upper surface of substrate, and multiple of nanorod light emitting devices provided on upper surface of two-dimensional material layer.

HAN J, LEE E, SHIN D, PARK J, PARK Y, KIM J, KIM N, KONG K, CHOI J, CHOI J H, HO K, KIM N H, KIM J S, PARK Y W, PARKJUNGHOON, HAN J H

Chuck assembly used in semiconductor device fabrication system, comprises chuck base includes lower base and upper base that is on lower base, ceramic plate on upper base, and isolator ring enclosing outer sidewall of lower base.

JUNG U, SHIN M, SUNG D, NA D, KIM D, KIM K, JEONG S, JUNG S H, KIMKYUNGSUN, KIM D W, SUNG D Y, SU S M, JUNGUNGYO

Image sensor comprises substrate including multiple photoelectric conversion elements, variable filter layer provided on substrate, and multiple micro lenses provided on variable filter layer, which comprises multiple first electrodes in first direction, and having first width in second direction.

JOE I, LEE K, KANG S, JANG M, CHANG M, KANG S K, LEEKWANGMIN, CHO I S, CHO I, LI G

Interconnect structure for electronic device, comprises first dielectric layer including trench, conductive wire filling inside of trench, first cap layer on top surface of conductive wire, first cap layer including doped graphene, and doped graphene being graphene doped with group fifth element.

JUNG A, KIM S, SHIN K, SHIN K W, KIM S T, JUNG A R