国家/地区 日本（17） 美国（2）
IPC部 H（14） C（9） B（5）
G（5）
IPC大类 H01（14） C01（9） G01（5）
B82（4） C07（4）
IPC小类 H01L（14） C01B（9） G01J（5）
B82Y（4） C07C（3）
IPC H01L051/05（7） H01L051/30（7） H01L021/336（6）
H01L029/786（6） H01L031/08（6） C01B032/182（5）
G01J001/02（5） B82Y040/00（4） C07C025/22（3）
H01L027/146（3） H01L031/10（3） B82Y020/00（2）
B82Y030/00（2） C01B032/186（2） H01L021/02（2）
发明人 HAYASHI K（5） KONDO O（4） YAMAGUCHI J（4）
HAYASHI H（3） YAMADA Y（3） OTOMO M（2）
SUDA S（2） YAMASHITA H（2）
公开年 2022（17）
申请年 2021（11）  2020（5） 
专利权人 FUJITSU LTD（17）

Optical sensor has graphene layer, and enhancement layer which is provided above graphene layer and reinforces intensity of optical electric field by surface plasmon resonance.

HAYASHI K

Producing multilayer graphene involves recrystallizing catalyst film by performing heat treatment of heating catalyst film containing iron and nickel in atmosphere containing hydrogen, and another atmosphere containing hydrogen and hydrocarbons to form stacked graphenes.

HAYASHI K

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Producing atomic film comprises physically peeling atomic film from multi-layered atomic film or layered bulk crystal using peeling substrate, and transferring peeled atomic film onto transfer substrate.

HAYASHI K

Graphene nanoribbon used as channel for electronic device e.g. top gate-type field effect transistor and thin film transistor, is fused cyclic compound.

YAMAGUCHI J, HAYASHI H, YAMADA Y

Production of substituted anthracene compound used as precursor for producing graphene nanoribbons, involves converting amino group and hydrogen atom bonded to carbon atom of anthracene-1,4,5,8-tetramine compound.

YAMAGUCHI J

Electronic device e.g. electronic apparatus, has island-like insulating film that is provided to cover second region which is adjacent to second surface of graphene in first region covered with first electrode.

ASO H, KONDO O, HAYASHI K, SUDA S

Graphene optical sensor e.g. solid-infrared sensor, has first periodic structure laminated on first region of graphene layer, and second periodic structure that is laminated in second region, where repetition periods of structures are different.

YAMASHITA H

Electronic device e.g. electronic apparatus, has first electrode which is provided on first surface of graphene and has first opening portion leading to first surface.

SUDA S