国家/地区 中国（17）
IPC部 H（16） B（2） C（2）
IPC大类 H01（16） B82（2） C01（2）
IPC小类 H01L（14） B82Y（2） C01B（2）
H01G（2）
IPC H01L029/16（5） H01L021/336（4） H01L029/78（4）
H01L021/28（3） H01L029/10（3） H01L031/0216（3）
H01L031/18（3） H01G011/32（2） H01G011/86（2）
H01L021/04（2） H01L031/0224（2）
发明人 JIN Z（14） PENG S（10） SHI J（10）
ZHANG D（10） MAO D（6） WANG S（6）
DAI X（4） JIA R（4） LIU X（4）
SUN H（4） TAO K（4） GUI Y（2）
公开年 2016（11） 2017（6）
申请年 2016（17）
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（17）

Graphene/gallium arsenide solar battery, has window layer arranged on graphene layer, where graphene layer is provided with anti-reflecting layer i.e. transparent film that is placed away from surface of window layer.

SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X

Performing chemical modification of graphene used in preparation of graphene devices, by performing photochemical modification of graphene and substrate using pulsed laser patterning, and subjecting to atomic layer selective deposition.

LU W, XIA Y, CHENG S, ZHANG Q, WANG H, LI N

Lithography of graphene device involves transferring graphene into target substrate, spin-coating polymethylmethacrylate material on graphene, subjecting graphene to deep ultraviolet lithography and depositing metal electrode on graphene.

WANG N

Method for preparing graphene/gallium arsenide (GaAs) solar battery, involves etching heavily doped gallium GaAs layer between front electrode grid lines to and preparing anti-reflective layer on surface of exposed graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Graphene/gallium arsenide solar battery, has hollow area located corresponding to positive electrode grid line and coated with anti-reflection coating, and heavy doping gallium arsenide cap layer arranged with graphene layer.

JIA R, GUI Y, SUN H, TAO K, DAI X, JIN Z, LIU X

Preparation of graphene/gallium arsenide solar cell involves preparing window layer on gallium arsenide epitaxial wafer surface, heavily doped gallium arsenide cap layer on window layer surface, and front electrode on cap layer surface.

SUN H, JIA R, TAO K, DAI X, JIN Z, LIU X

Method for reducing metal and graphene contact resistance in graphene FET device, involves providing insulating substrate with metal layer, and evaporating thin metal layer for performing detects treatment process on graphene material layer.

JIN Z, MAO D, PENG S, WANG S, SHI J, ZHANG D

Preparation of patterned graphene comprises forming photoresist layer on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing.

JIN Z, PENG S, ZHANG D, SHI J

Method for preparing graphene field effect transistor, involves transferring graphene material on substrate, preparing source and drain electrodes, performing photolithography followed by applying medium and forming graphene nanobelts.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing metal graphene dual-sided contact structure for graphene electronic device, involves exposing photo-resist material, forming upper layer metal pattern, and forming self-aligned double-metal contact structure of graphene.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D