国家/地区 中国（15）
IPC部 H（13） C（2）
IPC大类 H01（13）
IPC小类 H01L（11） H01G（2）
IPC H01L029/16（6） H01L021/336（4） H01L029/78（4）
H01L021/28（3） H01L029/10（3） H01G011/32（2）
H01G011/86（2） H01L021/02（2） H01L045/00（2）
发明人 JIN Z（10） PENG S（10） SHI J（10）
ZHANG D（10） MAO D（6） WANG S（6）
LIU M（3） LIU Q（2） LONG S（2）
LU N（2） LUO J（2） LV H（2）
WANG L（2） ZHANG K（2） ZHAO C（2）
公开年 2016（15）
申请年 2016（11）  2015（4） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（15）

Method for growing graphene that is utilized in semiconductor device, involves providing single crystal of silicon or germanium substrate, and growing graphene layers on epitaxial layer by chemical vapor deposition.

LUO J, ADAMSON H H, WANG L, ZHAO C, WANG G

Method for reducing metal and graphene contact resistance in graphene FET device, involves providing insulating substrate with metal layer, and evaporating thin metal layer for performing detects treatment process on graphene material layer.

JIN Z, MAO D, PENG S, WANG S, SHI J, ZHANG D

Preparation of patterned graphene comprises forming photoresist layer on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing.

JIN Z, PENG S, ZHANG D, SHI J

Method for preparing graphene field effect transistor, involves transferring graphene material on substrate, preparing source and drain electrodes, performing photolithography followed by applying medium and forming graphene nanobelts.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing metal graphene dual-sided contact structure for graphene electronic device, involves exposing photo-resist material, forming upper layer metal pattern, and forming self-aligned double-metal contact structure of graphene.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for manufacturing graphene field effect transistor, involves providing silicon substrate, forming insulating layer on silicon substrate, followed by forming leakage electrode on insulation layer, and forming graphene-based channel.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Bipolar retardant variable storage device, comprises substrate, lower electrode surface, rectification function layer, graphene layer, resistive dielectric layer, and upper electrode, where rectification layer is made of aluminum oxide.

LU N, LV H, LIU M, LIU Q, LIU S, LONG S, WANG Y, ZHANG K, ZHAO X

Non-volatile resistive memory, has graphene barrier layer stopping easily oxidizable metal ions from migrating into inert metal electrode through resistive functional layer under effects of electric field during programming process.

LIU Q, LIU M, SUN H, ZHANG K, LONG S, LV H, BANERJEE W, BENAGI R

Growing graphene involves forming single crystal metal silicide layer on substrate, and growing graphene layer on metal silicide layer using chemical vapor deposition method.

LUO J, ZHAO C

Top gate graphene field effect transistor contains semiconductor substrate, insulation layer provided on semiconductor substrate, graphene conductive layer provided on insulating layer and comb-type source/drain contact structure.

JIN Z, PENG S, ZHANG D, SHI J