国家/地区 中国（89）
IPC部 H（67） C（19） B（9）
G（8）
IPC大类 H01（66） C01（12） C23（7）
B82（6） G02（2） G06（2）
G11（2）
IPC小类 H01L（63） C01B（12） C23C（7）
B82Y（6） G02F（2） G11C（2）
H01G（2）
IPC H01L021/336（25） H01L029/78（18） H01L029/16（15）
H01L021/28（10） H01L029/06（8） H01L021/04（7）
C01B031/04（6） C23C016/26（6） H01L021/02（6）
H01L045/00（6） H01L029/10（5） H01L029/423（5）
H01L029/786（5） H01L031/18（5） B82Y040/00（4）
发明人 JIN Z（39） SHI J（26） ZHANG D（26）
PENG S（22） ZHU H（14） XIA Y（13）
LIU X（12） MA P（12） WANG S（11）
WANG X（11） LIU M（10） LIANG Q（7）
SUN H（7） GU K（6） JIA R（6）
公开年 2013（16） 2016（15） 2015（11） 2017（11） 2012（9） 2021（7） 2014（6） 2011（4） 2018（4） 2019（2） 2022（2） 2023（2）
申请年 2016（17）  2013（12）  2012（9）  2011（8）  2014（8）  2010（7）  2015（6）  2017（6）  2018（4）  2020（4）  2021（4）  2019（3） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（89）

Vertical transistor for use in integrated circuit, has interlayer structure arranged between source electrode and drain electrode, and gate dielectric layer is arranged between middle portion of channel and side wall of interlayer structure.

LIAO F, YANG G, LI L

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F

Polishing head for chemical mechanical polishing device for polishing of wafer used in semiconductor manufacturing field, has polishing film whose working surface is formed with conductive layer, and power supply unit connected with conductive layer through contact point.

TIAN G, LU Y, YANG T, ZHANG Y, SHEN J

Resistive random access memory, has barrier structure set between resistance change layer and upper electrode for performing erasing operation on device, where electron passes through conduction band of barrier structure.

XU X, LI X, DONG D, YU J, LV H

Graphene-based photoelectric detector for converting optical signal into electric signal, has electrode connected with graphene layer for deriving type carrier under action of external electric field, where carriers are opposite to each other.

LI Z, XIE L, LI B, LIU R, OU X, SUN F, ZHANG P, TANG B, YANG Y

Electro-optic modulator used in optical communication, has two electrodes that are formed above substrate, where one electrode is electrically connected with optical waveguide structure and another electrode is electrically connected with graphene layer.

LI Z, XIE L, OU X, LI B, LIU R, ZHANG P, SUN F, TANG B, YANG Y

Memristor for memristor-based neural morphology calculation chip, has barrier layer located on functional layer, and upper electrode layer that is located on barrier layer, where functional layer is resistive layer.

LIU M, LV H, ZHENG X, LI X, DONG D, YU J, XU X

Radio frequency switch device for radio frequency circuit of electronic device, has resistive-switching element formed on substrate, provided with bottom electrode and top electrode and attached with resistance change layer.

ZHAO B, BI J, ZHU W, XI K, HAN T, TIAN M

Device for wet transferring graphene film, comprises e.g. target substrate stage which is set in water tank, and is parallel to bottom of water tank, and target substrate set on upper surface of target substrate stage.

LU W, XIA Y, LI N, ZHAO L, LENG X, HE M, JIE X

Method for transferring graphene film on metal substrate, involves placing heated and dried target substrate on bottom surface of water tank, and syringe used to inject acetone solution into water tank to dissolve protective film.

JIE X, LU W, LI N, XIA Y