国家/地区 中国（10）
IPC部 H（10）
IPC大类 H01（10）
IPC小类 H01L（10）
IPC H01L033/00（7） H01L033/32（6） H01L033/02（4）
H01L033/06（4） H01L033/12（4） H01L033/14（3）
H01L033/46（2）
发明人 HU J（9） JIN C（7） LIU C（5）
ZHANG C（4） CHENG J（3） CHENG L（3）
GAO H（3） YIN C（3） ZHENG W（3）
GU W（2） ZENG J（2）
公开年 2022（8） 2023（2）
申请年 2022（8）  2023（2） 
专利权人 JIANGXI MTC SEMICONDUCTOR CO LTD（10）

Preparing epitaxial wafer used in LED chip, involves providing substrate, growing aluminum nitride layer on substrate sequentially buffer layer, and introducing hydrogen and nitrogen to perform surface treatment to layer before growing buffer layer.

GU W, JIN C, HU J, LV M, LIU C

Silicon-based UV-LED epitaxial structure, comprises buffer layer provided with silicon dioxide layer, silicon nitride layer, graphene layer, and aluminum nitroxide layer that are sequentially arranged on silicon substrate.

JIN C, HU J, LIU C, GAO H, ZHENG W, CHENG L

LED epitaxial wafer comprises substrate and buffer sequentially laminated on substrate, intrinsic gallium nitride layer, N-type gallium Nitride layer and multi-quantum well layer, electron blocking layer, and P-type semiconductor layer.

JIN C, HU J, LIU C, CHENG J, YIN C, ZHANG C

Epitaxial wafer for use in LED, has high-conductivity layer comprising n groups sequentially conductance sub-layer stacked on multi-quantum well layer, where each group of high conductance layer comprises aluminum gallium nitride layer.

HU J, LIU C, GAO H, CHENG L, ZHENG W, ZENG J

Silicon-based light emitting diode, has buffer layer laminated on silicon substrate, where buffer layer comprises graphene layer, first and second aluminum nitride layers and silicon nitride layer, and graphene layer is set on substrate.

HU J, LIU C, ZENG J, GAO H, CHENG L, ZHENG W

Light emitting diode epitaxial wafer used in solid illumination and display field, comprises substrate, first semiconductor layer, multi-quantum well layer and second semiconductor layer stacked in sequence, and quantum well layer and quantum barrier layer stacked periodically and alternately.

JIN C, HU J, CHENG J, YIN C, ZHANG C

Epitaxial structure of LED useful in high-end large power chip, has graphene thin membrane layer provided with a silicon nitride film layer and carbon nanofiber film layer and carbon nanometre film layer formed as a polyurethane film layer or silicon carbide film layer formed as an insulating film.

JIN C, WEN G, DONG G, ZHANG C, YANG L

LED epitaxial wafer comprises substrate, and low temperature nucleating sequentially on substrate, un-doped u-gallium nitride layer, inserting layer comprising first sub-layer laminated sequentially, and second and third sub-layers.

JIN C, HU J, YIN C, CHENG J, ZHANG C

Light emitting diode transparent electrode useful for mobile phone, comprises first layer electrode and second layer electrode set on epitaxial layer, epitaxial layer includes P/N electrode finger and P/N bonding pad, and first layer electrode includes chromium layer and transparent material layer.

HU J, ZHANG X, LUO G

Light-emitting diode with enhanced light emitting efficiency, has epitaxial layer arranged on substrate, and roughened gallium dioxide layer arranged on one side of epitaxial layer away from surface.

GU W, JIN C, HU J, JIA Z, YANG Q, LAN X, DOU Z