国家/地区 美国（25） 中国（10） 世界知识产权组织（8） 韩国（5） 台湾（5） 日本（4） 欧洲专利局（EPO）（3） 新加坡（3）
IPC部 H（25） B（5） C（3）
G（3）
IPC大类 H01（25） H05（6） B82（4）
C01（3） G11（3）
IPC小类 H01L（25） H05K（6） B82Y（4）
C01B（3） G11C（3）
IPC H01L029/66（9） H01L029/786（9） H01L029/16（8）
H01L029/78（7） H01L025/065（6） H01L029/778（6）
H01L021/02（5） H01L023/373（5） H01L023/532（5）
H01L027/108（5） H01L029/06（5） B82Y010/00（4）
H01L021/768（4） H01L023/00（4） H01L027/105（4）
发明人 SANDHU G S（9） YOO C H（5） NAKANO E（4）
FAY O R（3） MEADE R E（3） PANDEY S C（3）
CHUN H（2） HILL R J（2） HWANG D K（2）
KING G A（2） KINSLEY T H（2） PAX G E（2）
QU X（2） RICHARDS R K（2） SANDHU G（2）
公开年 2021（8） 2022（7） 2013（3） 2015（2） 2016（2）
申请年 2020（7）  2021（5）  2011（2）  2013（2）  2016（2）  2019（2）  2022（2） 
专利权人 MICRON TECHNOLOGY INC（25）

Graphene-containing-material for use in integrated assembly, comprises transition metal provided between graphene planes to improve out-of-plane-conductivity.

SARKAR S

Electronic system comprises semiconductor device including semiconductor device structure comprising 2D material structure including stack having substantially crystalline-defect-free forms of carbide and carbonitride, and peripheral circuitry electrically connected to semiconductor device.

PANDEY S C, MEADE R E

Apparatus for voltage equalization for pillars of memory array, comprises access line, conductive pillar having first end configured for coupling with access line, conductive pillar having second end opposite first end of conductive pillar, memory cell coupled between conductive pillar and word line.

FANTINI P, BEDESCHI F, VILLA C

Semiconductor device assembly, has thermally conductive material layer thermally conducting heat from between semiconductor devices outward in lateral direction perpendicular to vertical direction.

QU X, CHUN H

Integrated assembly for use in semiconductor device, comprises conductive line, and conductive structure over conductive line, where annular structure extending through conductive structure, and comprises dielectric material.

SILLS S E, HILL R J, KAEDING J F, HWANG D K

Anisotropic conductive film structure comprises array of discrete conductive regions within continuous region of adhesive dielectric material, where discrete conductive regions of array is mutually laterally spaced by pitch, and discrete conductive regions comprises conductive carbon-based material.

TUTTLE M E, NAKANO E

Integrated assembly for semiconductor device, has upwardly-extending structure comprising first insulative material, two-dimensional material, first electrostatic-doping-material, second insulative material and conductive-gate-structure.

SANDHU G S, HILL R J, HWANG D K

Semiconductor assembly comprises substrate having top surface and including graphene layer below top surface and configured to transfer thermal energy along lateral direction across substrate, semiconductor device over top surface of substrate, thermal connector and heat spreader.

NAKANO E, FAY O R, YOO C H

Transistor, comprises channel that comprises two-dimensional material adjacent to seed material, channel oriented perpendicular to base material, gate dielectric adjacent to two-dimensional material, and gates adjacent to gate dielectric.

SMYTHE J A, SANDHU G S, KULA W

Semiconductor device assembly with improved thermal performance, has thermally conductive material layer thermally conducting heat generated by semiconductor device laterally outward toward outer surfaces of encapsulant material.

QU X, CHUN H, QUAN X