国家/地区 中国（10）
IPC部 H（10） C（3） B（2）
IPC大类 H01（10） C01（3） H05（3）
IPC小类 H01L（10） C01B（3） H05K（3）
IPC H01L027/108（5） H01L029/786（5） H01L029/16（4）
H01L029/78（4） C01B031/04（3） H01L023/367（3）
H01L023/373（3） H01L029/06（3） H01L029/423（3）
H01L029/66（3） H01L029/778（3） H01L051/05（3）
H01L051/30（3） C01B031/02（2） H01L021/02（2）
发明人 SANDHU G S（4） HILL R J（2） HWANG D K（2）
SANDHU G（2） YOO C H（2）
公开年 2021（4） 2013（2） 2022（2）
申请年 2020（4）  2011（2）  2019（2） 
专利权人 MICRON TECHNOLOGY INC（10）

Integrated assembly for use in semiconductor device, comprises conductive line, and conductive structure over conductive line, where annular structure extending through conductive structure, and comprises dielectric material.

SILLS S E, HILL R J, KAEDING J F, HWANG D K

Integrated assembly for semiconductor device, has upwardly-extending structure comprising first insulative material, two-dimensional material, first electrostatic-doping-material, second insulative material and conductive-gate-structure.

SANDHU G S, HILL R J, HWANG D K

Semiconductor device assembly with improved thermal performance, has thermally conductive material layer thermally conducting heat generated by semiconductor device laterally outward toward outer surfaces of encapsulant material.

QU X, CHUN H, QUAN X

Integrated assembly e.g. transistor, comprises semiconductor material having more doped region adjacent less doped region, and two-dimensional material between doped regions.

KARDA K M, MOULI C, LIU H

Dual in-line memory module (DIMM) for thermal management, has memory die that is mounted over substrate on uppermost layer of graphene and has electrical connections in contact with corresponding substrate pads.

YOO C H, PAX G E, SHARMA Y, KING G A, KINSLEY T H, RICHARDS R K

Semiconductor device assembly for semiconductor module, has substrates which include graphene layer thermally coupled to thermal connector and configured to transfer thermal energy along horizontal direction across substrate.

YOO C H, FAY O R, NAKANO E

Semiconductor structure for semiconductor device comprises graphene material and graphene-lattice matching material over at least a portion of graphene material.

MEADE R E, PANDEY S C

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Method of forming switch e.g. graphene-containing switch for use as select device in memory device e.g. memory array, involves electrically coupling graphene structure with exposed portion of bottom electrode.

SANDHU G S, SANDHU G

Electrically conductive laminate structure useful in electrical interconnect, comprises graphene region sandwiched between pair of non-graphene regions, where non-graphene region includes electrically conductive non-graphene region.

SANDHU G S