国家/地区 美国（122） 韩国（98） 中国（32） 欧洲专利局（EPO）（32） 日本（12） 世界知识产权组织（4）
IPC部 H（111） C（58） B（41）
G（18） D（3）
IPC大类 H01（107） C01（50） B82（29）
C23（28） B32（23） B01（11）
B05（10） G03（6） G11（5）
H05（5） C30（4） G01（4）
B44（3） D01（2） G06（2）
IPC小类 H01L（103） C01B（50） B82Y（28）
C23C（27） B32B（23） H01B（12）
B01J（11） B05D（10） G03F（6）
C30B（4） H01M（4） B44C（3）
B82B（3） G11C（3） H01J（3）
IPC H01L029/16（47） H01L021/02（42） B82Y030/00（23）
C01B031/04（22） H01L021/768（22） B82Y040/00（21）
C23C016/26（20） H01L023/532（19） H01L029/66（19）
C01B031/02（18） H01L029/06（18） C01B032/186（16）
H01L029/786（16） H01L029/78（14） H01L021/285（12）
发明人 SHIN H（128）
公开年 2022（24） 2021（20） 2020（15） 2012（11） 2023（11） 2014（10） 2009（8） 2011（7） 2015（7） 2016（6） 2017（4） 2018（3） 2013（2）
申请年 2021（32）  2020（16）  2011（11）  2022（11）  2015（9）  2008（8）  2013（7）  2014（6）  2019（6）  2012（5）  2016（5）  2010（4）  2017（3）  2018（3）  2023（2） 
专利权人 SAMSUNG ELECTRONICS CO LTD（128）

Graphene structure for use in semiconductor device, comprises substrate, graphene on surface of substrate, and bonding region, where material of substrate and carbon of the graphene are covalently bonded, between surface of substrate and graphene, where bonding region has silicon carbide.

JUNG A, LEE C, SHIN K, KIM C, SHIN H, SONG H, BYUN K, LEE E

Complex of heterogeneous two-dimensional materials used in electronic device, comprises substrate, first two-dimensional material layer having two-dimensional crystal structure on substrate, and second two-dimension material layer.

SEOL M, SHIN H, BYUN K, HWANG H, LEE C, KIM H, SUK S H, BYUN K E, HWANGHYUNTAE, LEE C S, KIM H J, JIN J, LI C

Electronic device e.g. semiconductor memory device, for use in memory system, has gate oxide layer formed between resistance switching layer and gate, source and drain that are arranged on switching layer and spaced apart from each other, and color filter arranged on switching layer.

SHIN H, KIM H, HINTON H J, LIU C, HAM D, JANG H, LEE M

Forming thin film of transition metal dichalcogenide involves providing substrate in reaction chamber, depositing transition metal dichalcogenide thin film on substrate using sputtering process that uses transition metal precursor and chalcogen precursor and is performing at first temperature.

JUNG J, SOHN A, SHIN H, BYUN K, KIM S, KIM C

Manufacturing electronic device such as logic or memory device, involves preparing substrate including channel element, depositing carbon layer on channel element, depositing ferroelectric layer on carbon layer, depositing gate electrode on ferroelectric layer, and crystallizing.

SHIN H, SHIN K, JO S, LEE Y, HEO J

Manufacture of wiring used in electronic device, involves growing graphene layer on substrate using plasma of hydrocarbon at specific temperature by plasma enhanced chemical vapor deposition, and doping graphene layer with metal.

LEE C, LEE M, SHIN H, BYUN K, KIM K, SHIN K, SHIN K W, KIM K B, BYUN K E, SHIN H J, HYUN L, LEE C S

Semiconductor device has gate electrode, gate dielectric, channel layer with two-dimensional semiconductor material, where at location of gate electrode not vertically overlapping source and drain electrodes, height of gate electrode is defined from lowermost to uppermost surface of gate electrode.

SHIN H, CHO Y, SEOL M, LEE M

Electronic device with less contact resistance, comprise metal layer provided on partial region of substrate, two-dimensional material layer formed on metal or noble metal layer of low work function, and upper surface of substrate, and insertion layer formed between metal layer and material layer.

YOO M, SHIN H, SEOL M, KWON J, SHIN H J, YOO M S

Interconnect structure for electronic device, has conductive line arranged in trench, where first cap layer is formed on upper surface of conductive line, and comprises graphene-metal composite that comprises graphene.

SHIN H, BYUN K, NAM S, SHIN K, SHIN K W, NAM S G, BYUN K E, SHIN H J

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S