国家/地区 中国（10） 世界知识产权组织（2）
IPC部 C（6） H（5） B（2）
IPC大类 C01（5） H01（5） B82（2）
C23（2）
IPC小类 C01B（5） H01L（5） B82Y（2）
C23C（2）
IPC H01L021/336（5） C01B031/04（4） B82Y040/00（2）
H01L021/28（2）
发明人 CHEN J（10）
公开年 2014（4） 2012（2）
申请年 2014（4）  2016（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（10）

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H

Manufacture of graphene flash memory involves patterning conductive layer formed on semiconductor substrate, forming source/drain electrodes, dielectric layers, graphene layer and gate electrode, and etching dielectric layers.

WANG H, JIANG M, LI L, XIE X, WU T, CHEN J, LU G, XIE H, ZHANG X

Method for preparing flexible substrate of graphene device, involves performing low temperature deposition process to form grid medium layer and performing etching process on gate medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, SUN Q, XIE H, ZHANG X

Graphene contact resistance reducing method, involves forming source and drain electrode area on surface of thin film, forming hole in drain metal electrode, forming grid medium layer on film, and fixing gate with grid medium layer.

WANG H, JIANG M, XIE X, WU T, CHEN J, LU G, SUN Q, XIE H, ZHANG X

Graphene FET micro-zone heating method, involves regulating rear gate voltage to modulate edge micro-structure, and performing high-temperature narrow edge micro-structure heating process at temperature of about specific degrees centigrade.

WANG H, XIE X, WU T, XIE H, CHEN J, DENG L, LIU X, SUN Q, ZHANG X

Method of preparing double-gate MOSFET based graphene used in e.g. microelectronics field, involves forming back grid electrode over high-k gate thin film at back of substrate, after forming graphene at interface of substrate layers.

CHAI Z, CHEN J, LUO J, WU Q, YU T

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X