国家/地区 中国（22）
IPC部 C（14） H（11） B（2）
IPC大类 H01（11） C01（7） C23（6）
C30（4） B82（2）
IPC小类 H01L（11） C01B（7） C23C（6）
C30B（4） B82Y（2）
IPC H01L021/336（6） C01B031/04（5） C23C016/26（3）
C30B029/02（3） H01L021/28（3） B82Y040/00（2）
C23C016/44（2） C23C016/52（2） C30B025/00（2）
H01L021/02（2）
发明人 WU T（22）
公开年 2014（7） 2015（3） 2020（3） 2013（2） 2016（2） 2021（2）
申请年 2013（5）  2014（4）  2016（3）  2012（2）  2015（2）  2019（2）  2020（2）  2021（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（22）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Preparing two-dimensional compound semiconductor thin film useful in micro-nano electronic device, comprises placing insulating substrate with single-layer two-dimensional layered material/metal oxide film vertical heterostructure on surface in heating device, and introducing carrier gas.

SHI Z, ZHANG C, ZHU H, WU T, GAO B

Preparation of nickel-copper twin-crystal film involves depositing metal film on aluminum oxide crystal surface of sapphire substrate, obtaining front body nickel copper film, heating and annealing.

ZHANG X, WU T, WANG H, YU Q, XIE X

Graphene-phase change material structure comprises a phase change material layer, and a graphene layer is arranged on the top or bottom of the phase change material layer.

SONG Z, SONG W, ZHAO J, WU T

Preparing graphene film useful in electronic devices, comprises adjusting catalyst on silicon carbide substrate, heating obtained reaction sample, dissolving the silicon atoms contained in silicon carbide substrate and post treating.

ZHU H, WU T, CHEN J, ZHANG C, SHI Z, YU G

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Growth method of transition metal chalcogenide two-dimensional material-graphene heterostructure used in microelectronic device, involves heating substrate, dissolving carbon source on surface of substrate and heating source materials.

YU G, WU T, XIE X, SHI Z, CHEN J, ZHANG Y, SUI Y, CHEN Z

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H

Method for preparing graphene-boron nitride hetero-junction, involves heating and removing heat release adhesive tape to obtain graphene-boron nitride hetero-junction.

CHEN J, LU G, WU T, ZHANG X, WANG H