国家/地区 日本（34） 世界知识产权组织（27） 美国（25） 韩国（22） 台湾（5） 中国（2）
IPC部 C（36） H（32） B（10）
G（3）
IPC大类 H01（31） C01（29） C23（26）
H05（9） B01（7） B82（3）
C30（2） G01（2）
IPC小类 H01L（31） C01B（29） C23C（26）
H05H（8） B01J（7） H01J（6）
B82Y（3） C30B（2） G01N（2）
IPC C23C016/26（23） C01B032/186（16） H01L021/205（12）
H01L021/768（10） C01B031/02（8） C23C016/02（8）
H01L023/532（8） H05H001/46（8） C01B032/182（7）
C23C016/455（7） C23C016/511（7） H01L021/02（7）
C01B031/04（6） C01B032/18（6） C23C016/44（6）
发明人 MATSUMOTO T（31） IFUKU R（20） WADA M（8）
TAKASHI M（6） KABUKI N（5） KAGAYA M（5）
RYOTA I（5） NISHIDE D（4） SUGIURA M（4）
UEDA H（4） KASHIWAGI Y（3） YAMADA H（3）
AKIRA F（2） CLARK R D（2） KATO D（2）
公开年 2022（9） 2018（5） 2021（5） 2023（5） 2014（4） 2017（3） 2020（3） 2013（2） 2015（2） 2016（2）
申请年 2022（9）  2021（6）  2020（5）  2015（4）  2014（3）  2017（3）  2018（3）  2019（3）  2013（2）  2016（2） 
专利权人 TOKYO ELECTRON LTD（42）

Semiconductor device comprises stack of layers defining sidewall surface and comprising source and drain layers, channel structure extending through stack of layers, oriented in vertical direction perpendicular to main surface of stack of layers.

FULFORD H J, GARDNER M I

Plasma processing apparatus such as capacitive coupling type plasma processing device has conductive material that is provided with conductive film formed on second surface not facing plasma processing space of silicon element.

SAKANE R

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Semiconductor device comprises substrate containing patterned copper film containing manganese, graphene layer disposed over exposed surfaces of copper film, first manganese-containing diffusion barrier layer, and first dielectric layer.

CLARK R D

Vacuum processing apparatus for removing oxidizing gas, comprises decompressable process container, supply port that is formed on side wall of process container and configured to supply, to process container, and apparatus also comprises ionic liquid that absorbs oxidizing gas.

HAYAKAWA T, UMESHITA N, AKIYAMA K, SEKIGUCHI K, ASAKO R, NAKANO T, ARYAL D, ROTONDARO A, IWASHITA M, IIZUKA Y, UEDA H

Film forming method by loading substrate into processing container, forming graphene film on substrate with plasma of process gas comprising carbon-containing gas, forming doped graphene film on substrate and/or graphene film with plasma of process gas comprising dopant gas.

YAMADA H, IFUKU R, MATSUMOTO T, KABUKI N

Substrate processing includes taking substrate into processing vessel, removing oxygen-containing layer on substrate using plasma of gas mixture including hydrogen-containing gas, and forming nucleation layer and graphene film on substrate using plasma of gas mixture including carbon-containing gas.

IFUKU R, MATSUMOTO T, WADA M, KABUKI N

Upper electrode assembly used in plasma processing apparatus, has heat transfer sheet that is mounted between electrode plate and metal plate and having vertically oriented portion with vertically oriented graphene structures.

TSUJIMOTO H, KOBUNE T, LI L, LEE L, KOBUNEDAKAKI

Processing substrate by loading substrate into processing container, forming carbon film on substrate with plasma of mixed gas containing carbon-containing gas while inside of processing container is maintained at pressure, and changing inside of processing container.

WADA M, IFUKU R, MATSUMOTO T, YAMADA H, TAKASHI M