国家/地区 中国（55） 世界知识产权组织（2）
IPC部 C（37） H（15） G（9）
B（7） A（2） D（2）
IPC大类 C01（19） H01（14） C23（8）
C08（7） C02（6） G01（5）
C03（4） B01（3） B82（3）
C30（3） G02（3） A61（2）
C07（2） D01（2）
IPC小类 C01B（19） H01L（11） C23C（8）
C02F（6） C08L（5） C03C（4）
C08J（4） G01N（4） B82Y（3）
C30B（3） A61K（2） A61P（2）
B01J（2） C08G（2） C08K（2）
IPC C01B032/186（12） C23C016/26（7） H01L051/05（5）
C02F003/34（4） H01L051/30（4） C01B032/184（3）
C01B032/194（3） C08L075/04（3） H01L051/40（3）
A61P035/00（2） B01J020/28（2） B01J020/30（2）
B82Y040/00（2） C01B032/192（2） C02F001/28（2）
发明人 LIU Z（18） PENG H（11） LIU K（8）
ZHANG J（8） WANG Y（7） CHENG Y（6）
JI G（6） GAO X（4） WANG K（4）
YANG H（4） ZHANG Y（4） CAO F（3）
CHEN Z（3） HONG H（3） LI J（3）
公开年 2021（55）
申请年 2021（25）  2020（21）  2019（9） 
专利权人 UNIV PEKING（55）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Protein tyrosine phosphatase selective inhibitor useful in preparing medicine for treating diabetes, tumor and obesity, prepared by e.g. mixing vanadium compound with protein tyrosine phosphatase selective ligand and loading obtained compound on functionalized carrier.

DONG Y, FENG B, YANG X

Carrier for batch preparation of graphene film comprises supporting plates for placing substrate for growing graphene, heating plates for heating substrate, and electrode assembly connected with heating plates.

ZHU Y, MA Z, GAO X, SHAN J, JIA K, PENG H, LIU Z

Graphene cold wall growth device, has power supply whose two poles pass through two through holes of reaction chamber, where two poles of power supply are connected with upper electrode plate and lower electrode plate.

CHEN Z, JI N, SHEN C, XU S, ZHANG J

Method for forming graphene-substrate composite structure, involves fixing substrate through chemical vapor deposition chamber continuously at certain rate, where chemical vapor deposition in chemical vapor deposition chamber is deposited on substrate.

QI Y, CHENG Y, LI J, SHI P, LIU Z

Magnetization turning device based on track transfer moment useful in e.g. coagulation state physical spin electronics field comprises insulating medium layer formed on the front surface of the substrate and a back gate on the back surface of a substrate.

XU W, ZHU P, YE X, LIAO Z

Long channel narrowband gap semiconductor transistor use in an electronic industry, has gate dielectric layer and gate between two sides of gate structure having source electrode and drain electrode, and narrow band gaps semiconductor channels provided on narrowband channel layer.

PENG L, ZHANG Z, XU L

Saturated absorber used in full-fibre mode-locked laser, comprises optical fiber and graphene film which is formed on surface of optical fiber by growing.

CHENG Y, YU W, LIU K, LIU Z

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Optical fiber with graphene-boron nitride heterogeneous structure used in e.g. nonlinear mode-locked laser, comprises optical fiber main body, graphene thin film, and boron-nitride thin film arranged on surface of optical fiber main body.

YU W, CHENG Y, LIU K, LIU Z