国家/地区 中国（11）
IPC部 H（7） G（4）
IPC大类 H01（7） G02（4）
IPC小类 H01L（7） G02F（4） G02B（2）
IPC H01L021/02（6） G02F001/01（3） G02B005/00（2）
G02F001/00（2）
发明人 CAO B（11）
公开年 2020（4） 2017（3） 2018（2） 2021（2）
申请年 2020（5）  2017（2）  2018（2） 
专利权人 UNIV SOOCHOW（11）

Method for growing gallium nitride by using self-disappearing graphene mask, involves depositing graphene mask layer on substrate layer by using plasma enhanced chemical vapor deposition method and etching graphene mask layer to form grating stripe structure.

CAO B, CHEN W, XU L, LI L, YANG F

Semiconductor structure for growing gallium nitride by graphene mask method, has graphene mask layer etched to expose region of substrate layer as window region, and gallium nitride layer covered on surface of graphene mask layer.

CHEN W, CAO B, XU L, LI L, YANG F

Near infrared wide band optical switch based on graphene absorption enhancement comprises modulation layer covered on substrate and is is provided with dielectric layer and metal nano-cylindrical array through photo-etching-coating.

WANG Q, YUAN Z, CAO B, XIONG X, HE G, ZHOU H, LUO A, CHEN W, XU L

Growing gallium nitride by using a graphene mask involves using gallium nitride layer, mask layer and substrate layer, substrate layer is covered with graphene by vapor deposition method, and the mask layer is formed by etching the graphene.

CAO B, CHEN W, XU L, LI L, YANG F

Broadband transmission infrared light modulator based on graphene plasma used in field of optical device, has substrate, that is covered with modulation layer, and modulation layer is provided with a non-metallic grating layer.

WANG Q, YUAN Z, CAO B, XIONG X, HE G, ZHOU H, LUO A, CHEN W, XU L

Flexible gallium nitride-based graphene metal insulator semiconductor device, has graphene layer located on aluminum nitride sputtered layer, and electrode layer comprising metal layer and substrate, where metal layer is plated on substrate.

CAO B, ZHOU H, WANG Q

Graphene and metal hybrid structure based optical switch, has graphene layer fixed on dielectric layer, and metal electrodes arranged between substrate-reflecting layer and graphene layer, and voltage source connected with graphene layer.

CAO B, YANG S, WANG Q, ZHAO E, LIU Y

Graphene/metal composite structure based electro-optical modulator, has graphene layer paved on medium layer, where voltage source supplies voltage to graphene layer to modulate reflectivity size of incident light.

WANG Q, YANG S, CAO B, ZHAO E, LIU Y

Composite substrate/three-group nitride micron column structure, has composite substrate formed with growing graphene insertion layer that is covered on dielectric material, and nitride micron column layer inserted in growing group.

QIU Z, LU W, ZHAO E, XI L, LI Z, YANG S, CAO B, WANG Q

Nitride semiconductor surface modification method by putting nitride semiconductor substrate into plasma generator, heating, raising the temperature, and growing vertical structure graphene on nitride semiconductor.

CAO B, LI Z, ZHAO E, YANG S, LIU Y, WU Z, WANG Q