国家/地区 美国（8） 韩国（7） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（9） G（2）
IPC大类 H01（9） G01（2）
IPC小类 H01L（9） G01B（2） G01N（2）
IPC H01L021/02（5） H01L029/16（4） H01L029/45（4）
H01L029/24（3） H01L029/786（3） G01B015/02（2）
G01N023/2273（2） H01L021/285（2） H01L021/768（2）
H01L023/522（2） H01L029/10（2） H01L029/417（2）
H01L029/66（2）
发明人 CHO Y（10）
公开年 2021（5） 2022（5）
申请年 2021（10）
专利权人 SAMSUNG ELEC.（10）

Thin-film structure used in semiconductor element, comprises substrate, nanocrystalline graphene layer on substrate, and two-dimensional material layer on nanocrystalline graphene layer, where substrate is silicon, silicon dioxide, aluminum oxide, quartz, germanium, gallium nitride, aluminum nitride.

CHO Y, LEE Z, SHIN H, SONG S, SON S, KIM J, KWON S, LEE C, LEE C S, YONG K S, KIM J H, SONG S U, SHIN H J, YI J H, CHO Y C

Semiconductor device comprises two-dimensional material layer between metal layer and semiconductor layer, and metal compound layer between two-dimensional material layer and semiconductor layer.

SHIN H, SHIN K, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN K W, SHIN H J

Patterning two-dimensional material layer comprises forming two-dimensional material layer in both first region and second region, and removing two-dimensional material layer from second region based on using physical removal method.

CHO Y, YOO M, SHIN H, KWON J, SEOL M, NGUYEN V L, SHIN H J, YOO M S, CHO Y C

Interconnect structure for use in electronic device, has graphene layer formed between semiconductor layer and metal layer, and conductive metal oxide layer provided between graphene and semiconductor layers and covering region.

CHOI T, CHO Y, LEE C, LEE E, SHIN K, SONG H, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, SONG H J, SHIN K W, LEE C S, CHO Y C, CHOI T J

Semiconductor device comprises metal layer, semiconductor layer electrically contacting metal layer, and two-dimensional material layer formed between metal layer and semiconductor layer.

SHIN H, BYUN K, CHO Y, CHO Y C, BYUN K E, SHIN H J

Measuring thickness of graphene layer directly grown on silicon substrate by obtaining signal intensities from graphene layer directly grown on silicon substrate in response to emitting X-ray radiation toward graphene layer using X-ray photoelectron spectroscopy instrument and calculating thickness.

SHIN H, SONG H, BYUN K, KIM S, CHO Y, LEE E, CHO Y C, BYUN K E, SONG H J, SHIN H J, SHEN X, JIN S, ZHAO L, LI Y

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Layer structure for use in electronic device e.g. memory device, has insulating layer for covering outside surface of diffusion barrier and conductive material layer, where edge of barrier layer is aligned with edge of material layer.

LEE J, SHIN H, PARK S, CHO Y, NAM S, SONG H

Field effect transistor for use in integrated circuit devices, has source electrode and drain electrode arranged on substrate, gate insulating film for surrounding each of set of channel layers, and gate electrode for surrounding film.

SHIN H, CHO Y, SEOL M, LEE M, HYUN L, CHO Y C, SHIN H J, SHEN X, ZHAO L

Field effect transistor, has gate insulating layer including insulative, high-dielectric constant, two-dimensional material on channel layer, gate electrode provided on layer, and electrodes electrically connected to channel layer.

LEE M, SEOL M, JANG H W, CHO Y, SHIN H