国家/地区 韩国（8） 美国（7） 欧洲专利局（EPO）（4） 中国（3）
IPC部 H（9） C（5） B（2）
G（2）
IPC大类 H01（9） C01（3） G01（2）
IPC小类 H01L（8） C01B（3） G01B（2）
G01N（2）
IPC H01L021/02（3） H01L029/16（3） C01B032/182（2）
G01B015/02（2） G01N023/2273（2） H01L029/10（2）
H01L029/24（2） H01L029/423（2） H01L029/778（2）
H01L029/786（2）
发明人 CHO Y（12）
公开年 2021（12）
申请年 2020（6）  2021（5） 
专利权人 SAMSUNG ELEC.（8） UNIV PUSAN N.（2）

Measuring thickness of graphene layer directly grown on silicon substrate by obtaining signal intensities from graphene layer directly grown on silicon substrate in response to emitting X-ray radiation toward graphene layer using X-ray photoelectron spectroscopy instrument and calculating thickness.

SHIN H, SONG H, BYUN K, KIM S, CHO Y, LEE E, CHO Y C, BYUN K E, SONG H J, SHIN H J, SHEN X, JIN S, ZHAO L, LI Y

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Layer structure for use in electronic device e.g. memory device, has insulating layer for covering outside surface of diffusion barrier and conductive material layer, where edge of barrier layer is aligned with edge of material layer.

LEE J, SHIN H, PARK S, CHO Y, NAM S, SONG H

Producing graphene-carbon nanotube composite fiber, comprises e.g. preparing a first hybrid film coated with carbon nanotubes on upper surface of graphene synthesized on metal surface, and removing metal from the first film to prepare a second film.

LEE H, WOO C Y, HONG S G, CHO Y

Field effect transistor for use in integrated circuit devices, has source electrode and drain electrode arranged on substrate, gate insulating film for surrounding each of set of channel layers, and gate electrode for surrounding film.

SHIN H, CHO Y, SEOL M, LEE M, HYUN L, CHO Y C, SHIN H J, SHEN X, ZHAO L

Lignin depolymerization catalyst for producing lignin-derived bio-oil, comprises metal oxides, and graphene oxide on which metal oxide is supported and doped with nitrogen and metal particles.

PARKJUNGHOON, RANA M, CHO Y

Semiconductor device i.e. fin FET, for use in e.g. memories, has channel layer formed on gate dielectric and comprising two-dimensional semiconductor material, and source electrode and drain electrode electrically connected to channel layer.

LEE M, SEOL M, CHO Y, SHIN H

Field effect transistor, has gate insulating layer including insulative, high-dielectric constant, two-dimensional material on channel layer, gate electrode provided on layer, and electrodes electrically connected to channel layer.

LEE M, SEOL M, JANG H W, CHO Y, SHIN H

Method for forming graphene, involves preparing a substrate in a reaction chamber, performing a first growth process of growing multiple graphene aggregates apart from each other on the substrate at a first growth rate.

CHO Y, LEE C, KIM C, SHIN H, SHIN K, NGUYEN V L, SHIN K W, SHIN H J, LEE C S, CHO Y C

Forming transition metal dichalcogenide thin film on a substrate by treating substrate with metal organic material, and synthesizing a transition metal dichalcogenide on the substrate.

BYUN K, KIM H, PARK T, SHIN H, AHN W, LEEM M, CHO Y, JIN H, PIAO T, SHEN X, LIN M, ZHAO L, BYUN K E, KIM H S, PARK T J, SHIN H J, AHN W S, CHO Y C