国家/地区 韩国（20） 美国（9） 中国（4） 日本（3）
IPC部 H（19） B（5） C（3）
IPC大类 H01（19） B82（5）
IPC小类 H01L（19） B82Y（5）
IPC H01L029/78（6） H01L033/04（6） H01L021/336（5）
B82Y099/00（4） H01L029/786（4） H01L021/20（3）
H01L029/06（3） H01L029/10（3） H01L051/52（3）
H01L051/54（3） B82Y030/00（2） B82Y040/00（2）
H01L029/772（2） H01L029/775（2） H01L033/00（2）
发明人 CHUNG H J（20）
公开年 2012（20）
申请年 2010（11）  2011（9） 
专利权人 SAMSUNG LED .（12） SAMSUNG ELEC.（11） SNU R DB FOU.（2） UNIV SEOUL N.（2）

Graphene quantum dot for light-emitting structure of semiconductor light emitting device, comprises graphene core having functional group adhered to edge portion of graphene and shell chemically combined with functional group.

HWANG S W, YOO K H, KO G W, CHUNG H J, SONE C S

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Graphene electronic component e.g. radio frequency (RF) transistor, has gate electrode that is arranged on protective layer which is formed identical to shape of graphene channel layer between source electrode and drain electrode.

CHUNG H J, HEO J S, YANG H J, SEO S A, LEE S H, CHUNG H, HEO J, YANG H, SEO S, LEE S

Quantum dot light emitting device e.g. LED used in display for lighting, has graphene quantum dot that is fixed on electron-transport layer and hole-transport layer is arranged above light-emitting layer.

HWANG S W, KIM J S, CHUNG H J, CHA N G, SONE C S

Lamination structure of light emitting device, has graphene layer that is provided to cover quantum dot on base layer.

CHA N G, HWANG S W, CHUNG H J, SONE C S

Quantum dot light emitting device comprises substrate, graphene layer and luminous unit which comprises quantum dot light-emitting layer, where buffer layer is prepared on graphene layer.

HWANG S W, CHUNG H J, KIM J S, PARK T Y, SONE C S

Semiconductor light emitting device, has heat-release structure including metal nano pattern layer and graphene layer, which is contacted with light emitting unit, where nano pattern layer and graphene layer comprise streak patterns.

HWANG S W, CHUNG H J, YOO K H, SUNG Y K, SHIN Y H, SONE C S

Light emitting device package has protective film with graphene is equipped on encapsulating material.

HWANG S W, SUNG Y K, YOO K H, SHIN Y H, CHUNG H J, SONE C S

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J