国家/地区 中国（10）
IPC部 H（7） C（5）
IPC大类 H01（7） C01（4） C23（2）
IPC小类 H01L（6） C01B（4） C23C（2）
IPC C01B032/186（4） C23C016/26（2） H01L021/02（2）
H01L021/205（2）
发明人 DENG J（10）
公开年 2013（2） 2015（2） 2022（2） 2023（2）
申请年 2022（4） 
专利权人 UNIV BEIJING TECHNOLOGY（10）

Schottky junction detector for catalytic growth of graphene using phase change material in semiconductor optoelectronic device, has lower metal electrode, lightly doped n-type silicon, insulating dielectric layer, phase-change material film, graphene film, and upper metal electrode.

QIAN F, DENG J, XIE Y, HU L, XU C

Improving quality of metal catalytic thin layer prepared by sputtering comprises cleaning Si/SiO2 substrate, photoetching the pattern, sputtering a layer of metal thin layer with the graphene of catalyzing and growing on the substrate sheet by using the sputtering table, peeling and etching.

ZHAO Y, YU X, LIU Z, NIE X, SONG Z, DENG J, HE X

Directly growing patterned graphite on integrated circuit chip, involves cutting ultra-thin copper foil, pressing, placing chip sample in thermal chemical vapor deposition system, dipping into copper corrosion liquid, etching lower copper through a poly(methyl methacrylate) layer and drying.

HU L, DENG J, QIAN F, XIE Y, XU C

Growing high-quality graphene on insulating substrate at low temperature, involves using residual corrosive liquid deionized water drift cleaning substrate and drying, and using acetone and isopropanol to wash polymethyl methacrylate.

HU L, XIE Y, QIAN F, DENG J, XU C

Patterned growth of vertically oriented graphene useful e.g. in energy storage, involves prefabricating required pattern on target substrate by ultraviolet lithography, and growing graphene by plasma enhanced chemical vapor system.

XU C, QIAN F, DENG J, XIE Y, WANG Q, HU L

Method of improving quality of graphene on non-metallic substrate involves depositing layer of copper on graphene grown non-metallic substrate, performing chemical vapor deposition, and removing copper surface using oxygen plasma.

DENG J, FAN X, GUO W, SUN J, XU C, XU K

Non-metallic substrate graphene growing method, involves cleaning non-metallic substrate surface and blown dry with nitrogen, and locating thin metal layer substrate on CVD reaction chamber.

DENG J, FAN X, GUO W, SUN J, XU C, XU K

Field effect estimate CVD method for increasing graphene migration rate of copper foil, involves determining migration rate of graphene, and sending grid voltage to grid medium silicon dioxide to obtain unit area capacitance.

DENG J, GUO W, LIU Q, XU C, XU K, ZHU Y

Transparent electrode graphene film preparing method, involves arranging p-type and n-type gallium nitride layers on LED epitaxial wafer, and removing impurities on graphene film and indium tin oxide thin layer by photo-etching process.

SUN J, MAO M, XU K, XU C, DENG J, ZHENG L, XIE Y, ZHU Y

High power surface emitting laser with graphene film current extension layer, has lower electrode, N-type substrate, N-type and P-type distributed Bragg reflectors, graphite film current extension layer, and upper electrode.

LIU J, XU K, MAO M, SUN J, XIE Y, DENG J, ZHU Y, XU C