国家/地区 美国（11） 韩国（8） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（11） B（4）
IPC大类 H01（11） B82（4）
IPC小类 H01L（11） B82Y（4）
IPC H01L029/16（8） H01L029/78（7） H01L029/06（6）
H01L029/66（6） H01L029/786（6） H01L021/336（4）
H01L029/10（4） B82Y010/00（3） H01L029/08（3）
H01L029/423（2） H01L029/739（2） H01L029/778（2）
发明人 HEO J（11）
公开年 2014（8） 2013（3）
申请年 2013（11）
专利权人 SAMSUNG ELEC.（11） BYUN K（3） CHUNG H（3） HEO J（3）
PARK S（3） SEO D（3） SNU R DB FO.（3） SONG H（3）
LEE J（2） UNIV SEOUL N.（2）

Graphene memory has Schottky barrier that is formed between conductive semiconductor substrate and graphene layer such that graphene layer is used as charge-trap layer for storing charges.

LEE J, CHUNG H, PARK S, BYUN K, SEO D, SONG H, HEO J, LEE J H, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S, HUH J, JUNG H, SONG C, SAIL D

Electronic device e.g. field effect transistor (FET) has graphene that directly contacts area of semiconductor layer, and metal layer on graphene.

BYUN K, PARK S, SEO D, SONG H, LEE J, CHUNG H, HEO J, BYUN K E, PARK S J, SONG H J, LEE J H, CHUNG H J, HEO J S

Manufacture of graphene for fabricating electronic device and display device, involves forming silicon carbide thin film on substrate, forming metal thin film on silicon carbide thin film, and heating to obtain metal composite layer.

LEE D W, SHIN H, PARK S, BYUN K, SEO D, SONG H, WOO Y, LEE J, CHUNG H, HEO J, SHIN H J, PARK S J, BYUN K E, SONG H J, WOO Y S, LEE J H, CHUNG H J, HEO J S

Graphene switching device for use as diode has gate electrode which is provided on gate insulation layer arranged on graphene layer set on insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Memory device having FET structure, comprises graphene switching device having source, drain and gate electrodes and including Schottky barrier between drain electrode and channel in direction from source electrode toward drain electrode.

SEO D, KIM H, CHUNG H, PARK S, BYUN K, SONG H, HEO J, KIM H J, CHUNG H J, PARK S J, BYUN K E, SONG H J, HEO J S

Tunneling field-effect transistor (TFET) for controlling current tunneling through semiconductor between graphene channel and electrode, has gate insulating layer that is formed on graphene channel of semiconductor layer.

HEO J, PARK S, BYUN K, SEO D, SONG H, LEE J, CHUNG H, HEO J S, PARK S J, BYUN K E, SONG H J, LEE J H, CHUNG H J, XU D, HUH J, JUNG H

Graphene electronic device e.g. FET has gate oxide layer that is formed to cover graphene channel layer between source and drain electrodes, and gate electrode that is provided on channel layer between source and drain electrodes.

HEO J, CHUNG H, SEO S, LEE S, YANG H

Field effect transistor comprises graphene channel layer on a substrate, where layer defines slit; source electrode and drain electrode to apply voltages to layer; gate electrode on channel layer; and gate insulation layer.

LEE J, PARK S, BYUN K, SEO D, SONG H, SHIN H, CHUNG H, HEO J, LEE J H, PARK S J, BYUN K E, SONG H J, SHIN H C, CHUNG H J, HEO J S

Graphene electronic device, useful as e.g. FET, comprises graphene channel layer formed on hydrophobic polymer, gate oxide covering channel layer exposed by source and drain electrodes, and gate electrode formed on portion of channel layer.

YANG H, SEO S, LEE S, CHUNG H, HEO J

Method of fabricating graphene electronic device, involves forming graphene layer on insulating layer and connecting graphene layer having two end to electrodes respectively.

CHUNG H, BAEK S, SEO S, WOO Y, HEO J, SEO D