国家/地区 韩国（8） 美国（8） 欧洲专利局（EPO）（5） 中国（4） 日本（2） 世界知识产权组织（2）
IPC部 H（8） C（6） G（5）
IPC大类 H01（8） C01（5） C23（4）
G01（4） G02（2）
IPC小类 H01L（6） C01B（5） C23C（4）
G01N（3） G01B（2） G02F（2）
H01M（2）
IPC C01B032/182（3） C23C016/26（3） C01B032/186（2）
C23C016/02（2） G01B015/02（2） G01N023/2273（2）
H01L021/285（2） H01M004/36（2） H01M004/38（2）
H01M004/48（2） H01M004/58（2） H01M004/587（2）
H01M004/62（2） H01M010/052（2）
发明人 LEE E（11）
公开年 2021（11）
申请年 2021（6）  2020（4） 
专利权人 SAMSUNG ELEC.（9） UNIV SUNGKYU.（3）

Growing two-dimensional transition metal chalcogenide film for manufacturing e.g. diode, involves placing patterned metal layer on substrate surface, supplying chalcogen precursor and transition metal precursor to chamber, and evacuating.

LEE E, AHN W, KIM H, LEE H, LEE H S, KIM H S, AHN W S, HA L

Measuring thickness of graphene layer directly grown on silicon substrate by obtaining signal intensities from graphene layer directly grown on silicon substrate in response to emitting X-ray radiation toward graphene layer using X-ray photoelectron spectroscopy instrument and calculating thickness.

SHIN H, SONG H, BYUN K, KIM S, CHO Y, LEE E, CHO Y C, BYUN K E, SONG H J, SHIN H J, SHEN X, JIN S, ZHAO L, LI Y

Measuring thickness of graphene layer grown on silicon substrate by using X-ray photoelectron spectroscopy device comprises obtaining signal intensities from graphene layer to emit X-ray radiation and calculating thickness of graphene layer.

LEE E, CHO Y, KIM S, BYUN K, SONG H, SHIN H

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Conductive structure for single layer structure, has work function control layer that is configured to control work function of conductive structure, where work function control layer is bonded to the conductive material layer.

SHIN H, KIM S, BYUN K, LEE E, KIM C, LEE C

Apparatus for manufacturing graphene by using plasma, has gas supply for supplying reducing gas into reaction chamber at height from upper surface of substrate supporter in height direction of reaction chamber.

LEE C, LEE E, SHIN H, BYUN K, KIM S, BYUN K E, SHIN H J, LEE C S

Silicon-silicon composite oxide-carbon composite used for negative electrode active material for lithium secondary battery, comprises core-shell structure comprising core comprising silicon, silicon oxide compound, and magnesium silicate, and shell comprising carbon layer, and has preset span value.

LEE E, PARK H, LIM S W, OH S M, LIM J C, HUNSOO P, IMSUNGWOO, LIM J

Light detecting device for use in optical system, has graphene layer for absorbing portions of light transmitted in waveguides, and first electrode and second electrode electrically connected to graphene layer, respectively.

LEE E, CHOI B, GU T, WHANG D

Growing graphene selectively involves forming ion implantation region and ion non-implantation region in substrate by implanting ions locally into substrate and selectively growing graphene in ion implantation region.

LEE E, SHIN H, SHIN K, BYUN K, KIM C, LEE C, LEE C S, BYUN K E, SHIN K W, SHIN H J

Light detecting device for use in an optical system, comprises a light input device for receiving light, multiple waveguides extending from the light input device, and a first electrode and a second electrode are electrically connected to the graphene layer.

WHANG D, GU T, CHOI B, LEE E, KYEONG L E, CHOI B L, GU T J, WHANG D M, CUI B, HWANG T