国家/地区 中国（33） 美国（2） 世界知识产权组织（2）
IPC部 C（32） H（12） B（5）
IPC大类 C01（23） H01（12） C30（7）
C23（6） B82（5） C04（5）
IPC小类 C01B（23） H01L（12） C30B（7）
C23C（6） B82Y（5） C04B（5）
IPC C01B031/04（23） H01L021/02（7） C04B041/50（5）
C23C016/26（5） B82Y040/00（4） C04B041/85（4）
C30B025/02（4） C30B025/18（4） C30B029/02（4）
H01L021/04（3） C23C016/02（2） C23C016/56（2）
C30B033/02（2） H01L021/205（2） H01L021/324（2）
发明人 LEI T（33）
公开年 2012（25） 2013（8）
申请年 2012（33）
专利权人 UNIV XIDIAN（33） DENG P（2） GUO H（2） LEI T（2）
ZHANG K（2） ZHANG Y（2）

Preparation of silicon substrate patterned graphene for semiconductor element, involves growing silicon carbide layer, silica layer, pattern window, and carbon film on substrate, removing silica, coating copper film, and annealing.

GUO H, ZHANG K, ZHANG Y, ZHAO Y, LEI T, ZHANG C

Preparing graphene film comprises cutting silicon substrate and then cleaning, putting the cleaned substrate into chemical vapor deposition system reaction chamber, and growing carbon layer on the substrate.

LEI T, GUO H, ZHANG Y, ZHAO Y, ZHANG K, TANG X

Preparation of silicon-substrate patterned graphene involves passing argon gas-carrying carbon tetrachloride to quartz tube with to-be-patterned film, depositing nickel film on obtained carbon film, annealing and removing nickel film.

LEI T, GUO H, ZHANG Y, ZHANG K, ZHANG C, ZHAO Y

Preparation of patterned graphene material for transistor, by cleaning silicon carbide wafer, coating photoresist layer, placing in buffered hydrofluoric acid solution, carrying out electron beam deposition of nickel film, and patterning.

LEI T, ZHANG Y, TANG X, ZHANG K, ZHAO Y, GUO H

Preparing patterned graphene material comprises removing pollutant on surface of silicon carbide wafer, cleaning surface of silicon carbide, and coating a photoresist layer on the mask surface of the silicon dioxide layer.

TANG X, GUO H, LEI T, ZHAO Y, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises growing carbon layer on substrate, growing carbon-silicon carbide layer and performing physical vapor deposition to plate copper film.

GUO H, ZHAO Y, LEI T, ZHANG Y, ZHANG K

Preparation of graphene used for manufacturing high-mobility graphene transistor comprises performing plasma-enhanced chemical vapor deposition to deposit silicon dioxide and performing physical vapor deposition to plate copper film.

ZHANG Y, WEI C, LEI T, ZHANG K, GUO H, ZHAO Y

Preparation of patterned graphene material by heating patterned substrate, introducing argon and chlorine gas mixture, reacting chlorine with exposed silicon carbide, forming carbon film, electron beam depositing nickel layer, and annealing.

ZHAO Y, LEI T, ZHANG Y, ZHANG K, GUO H, HU Y

Preparing structured graphene, comprises cleaning silicon substrate and vacuumizing, introducing propane into the substrate to carbonize, performing heteroepitaxial growth, and cooling the epitaxial cubic silicon carbide film.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Preparation of structured graphene on silicon carbide substrate useful for preparing microelectronic device, involves cleaning silicon carbide sample sheet, depositing layer of silicon dioxide and nickel film annealing.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F