国家/地区 美国（9） 日本（8） 韩国（2） 台湾（2）
IPC部 H（10） C（4）
IPC大类 H01（10） C01（3）
IPC小类 H01L（10） C01B（3）
IPC H01L023/532（9） H01L021/3205（8） H01L021/768（8）
H01L021/285（5） H01L023/52（5） H01L021/28（4）
C01B031/02（3） H01L023/48（3） H01L029/16（3）
H01L021/02（2） H01L023/528（2）
发明人 SAKATA A（10）
公开年 2016（4） 2012（2） 2013（2）
申请年 2015（4）  2011（2） 
专利权人 TOSHIBA KK（10） KAJITA A（3） KITAMURA M（3） SAKATA A（3）
KATAGIRI M（2） SAKAI T（2） WADA M（2） YAMAZAKI Y（2）

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Sensor e.g. biosensor for detecting detection target substance, has first electrode which is electrically connected to first edge of first graphene film that is parallel with first direction.

SAITO T, KITAMURA M, SAKATA A, KAJITA A, ISOBAYASHI A, SAKAI T

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M

Semiconductor device, has foundation layer including first and second layers, catalyst layer formed on surface of foundation layer, where catalyst layer includes protruding area, and graphene layer is in contact with protruding area.

ISHIKURA T, KAJITA A, SAKAI T, ISOBAYASHI A, WADA M, SAITO T, KITAMURA M, SAKATA A

Semiconductor device has insulation film that is formed on graphene interconnect, and via conducting portion that is formed in via hole that is provided in interconnect and insulation film.

KITAMURA M, SAKATA A, MIYAZAKI H, KAJITA A, SAKAI T

Semiconductor device has metal interconnect and graphene interconnect that are stacked to one another.

SAKATA A, KITAMURA M, WADA M, KATAGIRI M, YAMAZAKI Y, KAJITA A

Manufacturing method of semiconductor device, involves forming graphene layer on catalyst layer after planarizing exposed surface of catalyst layer by oxidation-treating.

YAMAZAKI Y, KATAGIRI M, SAKAI T, SAKUMA H, KITAMURA M, SAKATA A, WADA M, KAJITA A, MIZUSHIMA I, SAKUMA N

Semiconductor device has graphene layers which include multiple graphemes laminated perpendicularly with respect to the corresponding side surfaces of core of wiring.

WADA M, YAMAZAKI Y, KAJITA A, SAKATA A

Graphene interconnection for use in interconnection layer of large scale integration device, has graphene layer formed on catalyst film in interconnection trench and provided with graphene sheets.

SAITO T, WADA M, KAJITA A, SAKATA A

Semiconductor device has graphene layer with several graphenes which are laminated vertically.

WADA M, YAMAZAKI Y, KAJITA A, SAKATA A