国家/地区 韩国（25） 美国（21） 中国（9） 日本（8）
IPC部 H（24） B（14） C（6）
IPC大类 H01（24） B82（10） C01（6）
B32（4） C23（4） B01（3）
H03（2）
IPC小类 H01L（22） B82Y（8） C01B（6）
B32B（4） C23C（4） B01J（3）
B82B（3） H01B（2）
IPC H01L029/78（11） H01L029/786（11） H01L021/336（10）
B82Y040/00（6） B82Y030/00（5） H01L029/10（5）
H01L051/05（5） B82Y099/00（4） C01B031/02（4）
C01B031/04（4） H01L029/06（4） H01L029/16（4）
H01L029/775（4） H01L029/778（4） H01L051/30（4）
发明人 SEO S A（25）
公开年 2011（9） 2012（8） 2009（3） 2017（2）
申请年 2010（8）  2011（8）  2007（3）  2016（2） 
专利权人 SAMSUNG ELEC.（22） SNU R DB FOU.（3） HANWHA TECHW.（2） UNIV SEOUL N.（2）

Graphene-based laminate used in transparent electrode for electronic device, comprises substrate, graphene layer arranged on substrate surface and metal oxide layer comprising metal oxide having greater work function than that of graphene.

SEO S, SHIN S, PARK J S, YOON J H, JANG J H, CHAE S J, SEO S A, SHIN S M, PARK J, JINHO J, CHAE S

Graphene-based laminate used in e.g. organic light emitting device, transistors, comprises substrate, graphene layer on substrate, and inorganic layer comprising fluorine-containing lithium compound, formed on graphene layer.

PARK C, CHO S, SEO S, SHIN S, PARK C H, CHO S M, SEO S A, SHIN S M

Preparing graphene-based thin-film laminate used in e.g. transistor, comprises conducting cycle having e.g. contacting surface of graphene onto substrate with non-metal precursor gas and activating surface of graphene with plasma N times.

PARK C, CHO S, SEO S, SHIN S, KIM T, KIM S, PIAO Z, SEO S A, SHEN Z, PARK C H, CHO S M, SHIN S M, KIM T K, KIM S Y

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W

Graphene electronic device e.g. back gate FET, has graphene channel layer extending between metals, and source electrode and drain electrode provided on edges of channel layer and formed to have thickness of specific range.

HEO J, CHUNG H, SEO S, LEE S, YANG H, HEO J S, CHUNG H J, SEO S A, LEE S H, YANG H J, JEONG H J, HUH J, JUNG H

Graphene electronic device e.g. FET has source electrode and drain electrode that are connected to both edges of multiple graphene channel layers.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J, SHIN J, HUH J, JUNG H

Graphene electronic component e.g. radio frequency (RF) transistor, has gate electrode that is arranged on protective layer which is formed identical to shape of graphene channel layer between source electrode and drain electrode.

CHUNG H J, HEO J S, YANG H J, SEO S A, LEE S H, CHUNG H, HEO J, YANG H, SEO S, LEE S

Graphene substrate comprises a substrate, metal oxide film on the substrate, and graphene layer on metal oxide film in which the concentration of oxygen in metal oxide film is gradually reduced from the substrate towards the graphene layer.

CHUNG H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, SEO S A, LEE S H, HEO J S, YANG H J

Graphene electronic device e.g. field effect transistors, has graphene channel layer which is formed on gate insulating layer and source and drain electrodes are located on graphene channel layer.

HEO J, SEO S, LEE S, CHUNG H, YANG H, SEO S A, JUNG H, HUH J, HEO J S, LEE S H, CHUNG H J, YANG H J

Semiconductor device comprises gate electrode on substrate, gate insulating layer, interlayer dielectric layer, graphene layer, and source and drain on graphene layer.

CHUNG H, LEE J, SHIN H, SEO S, LEE S, HEO J, YANG H, CHUNG H J, LEE J H, SHIN H C, SEO S A, LEE S H, HEO J S, YANG H J