国家/地区 美国（29）
IPC部 H（29） C（15） B（11）
IPC大类 H01（29） C01（12） B82（11）
C23（5） H05（4）
IPC小类 H01L（29） C01B（12） B82Y（11）
C23C（5） H01B（2） H01J（2）
H05H（2） H05K（2）
IPC H01L023/532（26） H01L021/768（23） H01L021/3205（22）
H01L023/48（10） H01L023/52（10） C01B031/02（9）
H01L021/285（9） B82Y030/00（7） H01L021/28（7）
H01L021/02（6） H01L023/522（6） C23C016/26（5）
H01L023/528（5） B82Y099/00（4） H01L029/06（4）
发明人 WADA M（29）
公开年 2015（6） 2014（5） 2012（4） 2013（4） 2016（4） 2011（2） 2021（2） 2023（2）
申请年 2015（7）  2013（6）  2011（5）  2014（3）  2010（2）  2012（2）  2020（2）  2022（2） 
专利权人 TOSHIBA KK（25） WADA M（6） KAJITA A（5） SAKAI T（4）
TOKYO ELECTR.（4） YAMAZAKI Y（4） ISOBAYASHI A（3） KITAMURA M（3）
SAITO T（3） KATAGIRI M（2） MIYAZAKI H（2） SAKATA A（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Processing device for forming film, consists of processing container having thermal sprayed ceramic coating on inner wall, mounting table for holding substrate and control unit for performing precoating and film forming.

WADA M, MATSUMOTO T, SUGIURA M, IFUKU R, UEDA H, KURYOTA L

Manufacture method of semiconductor device, involves forming graphene interconnect by patterning graphene film into which dopant is introduced.

WADA M, YAMAZAKI Y, MIYAZAKI H, KAJITA A, SAITO T, ISOBAYASHI A, ISHIKURA T, KATAGIRI M, SAKAI T

Semiconductor device such as metal oxide semiconductor (MOS) transistor and capacitor, has graphene layer with first graphene layer and is provided on second catalyst region.

SAITO T, KITAMURA M, SAKATA A, WADA M, KAJITA A, SAKAI T

Method for manufacturing semiconductor device, involves forming first film, pattern of second film on upper surface of first film and graphene film on upper surface of first film and from side surface of pattern of second film.

ISOBAYASHI A, KITAMURA M, YAMAZAKI Y, KAJITA A, SAITO T, ISHIKURA T, SAKATA A, SAKAI T, WADA M

Semiconductor device, has foundation layer including first and second layers, catalyst layer formed on surface of foundation layer, where catalyst layer includes protruding area, and graphene layer is in contact with protruding area.

ISHIKURA T, KAJITA A, SAKAI T, ISOBAYASHI A, WADA M, SAITO T, KITAMURA M, SAKATA A

Semiconductor device, has metal layer provided above substrate with semiconductor element, and graphene layer including cross-sectional surface and extending in longitudinal direction, where metal layer includes convex shape on surface.

WADA M, YAMAZAKI Y, KAJITA A, ISOBAYASHI A, SAITO T

Semiconductor device for large scale integrated circuit (LSI), has graphene wires that are provided within each catalyst film formed in trenches of wire layer.

YAMAZAKI Y, WADA M, KITAMURA M, SAKAI T