国家/地区 中国（29）
IPC部 H（19） C（15） B（4）
G（2）
IPC大类 H01（19） C01（10） C23（7）
C30（6） B82（4） C09（2）
G01（2）
IPC小类 H01L（18） C01B（10） C23C（7）
C30B（6） B82Y（4） C09K（2）
IPC H01L021/336（7） C01B031/04（6） H01L021/28（6）
C01B032/186（5） B82Y040/00（4） C23C016/26（4）
C30B029/02（4） H01L043/06（3） H01L043/14（3）
C09K005/14（2） C23C014/18（2） C23C014/35（2）
C30B025/18（2） H01L021/04（2） H01L029/78（2）
发明人 WANG H（29）
公开年 2014（8） 2015（5） 2016（5） 2013（4） 2022（2）
申请年 2013（6）  2015（5）  2012（4）  2014（4）  2016（4） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（29）

Graphene processing device for providing low energy injection ion for use in e.g. biological medicine application, has upper electrode net and the lower electrode net through which plasma generated by plasma coil discharge passes so as to process sample located on sample seat in processing chamber.

WANG W, JIANG C, WANG Y, WANG H

Preparing quantum resistance chip based on graphene, involves providing silicon carbide substrate, annealing silicon carbide substrate, performing epitaxial growth on surface of substrate by using chemical vapor deposition method by using silicon ethane as gas catalyst and acetylene.

XIAO X, CHEN L, KONG Z, WANG H

Preparation of hexagonal boron nitride surface torsion double-graphite alkene involves introducing reaction gas and catalytic gas into chemical vapor growth chamber at second preset temperature.

WANG W, XIAO X, JIANG C, WANG H

Preparation of nickel-copper twin-crystal film involves depositing metal film on aluminum oxide crystal surface of sapphire substrate, obtaining front body nickel copper film, heating and annealing.

ZHANG X, WU T, WANG H, YU Q, XIE X

Preparing graphene single crystal wafer on copper-based textured film substrate comprises placing copper-based textured film substrate in chemical vapor deposition system for annealing, and epitaxially growing graphene single crystal wafer.

ZHANG X, WU T, WANG H, YU Q, XIE X

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Transferring graphene to target substrate used to obtain multilayer graphene, involves depositing graphene on first substrate, covering graphene with buffer layer and adhering heat release adhesive tape on buffer layer.

CHEN J, WU T, WANG H, XIE X

Quantum interference device structure for use in sensors and other devices, comprises first superconductor layer and first dielectric layer, graphene layer, second dielectric layer, metal layer and second superconducting layers.

WANG H, XIE H, LI L, YANG P, XIE X, JIANG M

Method for preparing quantum hall device, involves forming superconducting thin film layer on substrate, covering with dielectric thin film layer, and forming graphene layer, followed by forming metal electrode.

WANG H, XIE H, WANG X, XIE X, JIANG M

Preparation of metal vapor auxiliary layer rapid growth graphene comprises taking copper-nickel alloy substrate, washing, placing in chemical vapor deposition chamber, positioning, sparging with argon and methane, and growing.

JIANG M, LU G, XIE X, YANG C, WU T, ZHANG X, WANG H