国家/地区 中国（13）
IPC部 C（10） H（5） B（2）
IPC大类 C01（7） H01（5） C23（3）
B82（2）
IPC小类 C01B（7） H01L（5） C23C（3）
B82Y（2）
IPC C01B031/04（4） C23C016/26（3） B82Y030/00（2）
C01B032/184（2） C01B032/186（2）
发明人 WANG Z（13）
公开年 2015（5） 2017（4） 2018（2）
申请年 2015（8）  2016（2） 
专利权人 SHANGHAI INST MICROSYSTEM INFORMATION（13）

Superconducting nanowire single photon detector device, has detector provided with superconducting nanowire, and graphene structure provided with bottom of superconducting nanowire, where detector comprises substrate.

ZHANG L, YOU L, WANG Z

Graphene growth method used for increasing the nucleation density of graphene, involves providing germanium substrate, performing ion implantation on germanium substrate, annealing, providing carbon source and growing.

DI Z, MA J, ZHANG M, WANG G, JIA P, WANG Z, WANG X

Preparing directly layer of controllable graphene on insulating substrate comprises forming insulating substrate on first metal layer, injecting carbon ions, forming second metal layer on surface of first metal layer and annealing.

DI Z, WANG Z, WANG G, ZHENG X, DAI J, XUE Z, ZHANG M, WANG X

Preparation of continuous single layer graphene on insulating substrate by providing insulating substrate, depositing germanium film on insulating substrate, using germanium film as catalyst and growing graphene at high temperature.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of patterned graphene involves providing insulating substrate, depositing germanium film on insulating substrate, etching desired pattern in germanium film, forming patterned germanium film, and continuously evaporating.

DI Z, WANG Z, DAI J, WANG G, ZHENG X, XUE Z, ZHANG M, WANG X

Preparation of germanium-based graphene nanopore by providing germanium-based graphene, performing ion implantation on germanium-based graphene, generating point defects in graphene and annealing to etch point defects.

DI Z, MA J, ZHANG M, XUE Z, JIA P, WANG Z, WANG G, WANG X

Photoelectric detector preparing method involves forming graphene layer, and obtaining structural surface, and contacting graphene layer and thin film semiconductor layer with each other to form hetero-junction portion.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of nanowire and graphene composite material by providing silicon germanium-on-insulator substrate comprising silicon substrate, oxide layer and silicon germanium layer from bottom to top, and etching silicon germanium layer.

DI Z, XUE Z, ZHANG M, YE L, DAI J, WANG Z

Preparing reversible N-type graphene by forming graphene layer on substrate, placing substrate, on which graphene layer grows, in atomic layer deposition chamber, and increasing concentration of water in water/oxygen molecule pair.

CAO D, CHENG X, ZHANG D, WANG Q, WANG Z, ZHENG L, YU Y, CHEN L

Preparation of wrinkle-free graphene involves subjecting catalytic substrate to ion injection, forming discrete end injection units at catalytic substrate, and heating catalytic substrate in growth chamber.

DI Z, WANG G, XUE Z, ZHANG M, ZHENG X, DAI J, WANG Z