国家/地区 韩国（11） 美国（10） 中国（3） 欧洲专利局（EPO）（3）
IPC部 H（10） C（3）
IPC大类 H01（10） C23（3） C01（2）
IPC小类 H01L（10） C23C（3） C01B（2）
IPC H01L021/02（8） H01L029/16（7） H01L029/24（6）
H01L029/66（6） H01L029/786（6） H01L029/417（4）
C23C016/26（3） H01L029/06（3） H01L029/76（3）
C01B032/186（2） H01L021/285（2） H01L021/336（2）
H01L029/10（2） H01L029/423（2） H01L029/45（2）
发明人 YOO M S（11）
公开年 2023（4） 2022（3） 2021（2）
申请年 2021（4）  2022（3）  2019（2） 
专利权人 SAMSUNG ELEC.（8） CENT ADVANCE.（3） POSTECH ACAD.（3）

Two-dimensional material structure for use in semiconductor device, has two-dimensional material layer formed on exposed surface of insulator, and another two dimensional material layer including two dimensional materials.

SEOL M, SHIN K W, KWON J, YOO M S, LEE C S, LEE C, YOO M, SHIN K

Field effect transistor comprises substrate, gate electrode on substrate, insulating layer, source electrode on insulating layer, drain electrode spaced apart from source electrode, channel between source electrode and drain electrode comprising two-dimensional material and tensile strain region.

KWON J, SEOL M, YOO M, YOO M S, QUAN J, YU M

Layer structure for use in integrated circuit device, comprises lower layer, ion implantation layer in lower layer, and carbon-based material layer on ion implantation layer, and ion implantation layer includes carbon, and further has high electrical performance with ultra small structure.

YOO M, BYUN K, KIM S, LEE C, LEE C S, BYUN K E, YOO M S

Electronic device with less contact resistance, comprise metal layer provided on partial region of substrate, two-dimensional material layer formed on metal or noble metal layer of low work function, and upper surface of substrate, and insertion layer formed between metal layer and material layer.

YOO M, SHIN H, SEOL M, KWON J, SHIN H J, YOO M S

Patterning two-dimensional material layer comprises forming two-dimensional material layer in both first region and second region, and removing two-dimensional material layer from second region based on using physical removal method.

CHO Y, YOO M, SHIN H, KWON J, SEOL M, NGUYEN V L, SHIN H J, YOO M S, CHO Y C

Semiconductor device comprises a substrate, semiconductor layer comprising a two-dimensional (2D) material having a layered structure, and adhesive layer between the substrate and semiconductor layer and having adhesiveness to 2D material.

YOO M, SHIN H, KWON J, LEE E, SEOL M, NGUYEN V L, SHIN H J, YOO M S

Field effect transistor has channels having hollow closed cross-sectional structure when viewed in first cross-section formed by plane across source and drain electrodes in direction perpendicular to substrate, and gate insulating layers.

YOO M, SHIN H, KWON J, LEE M, SEOL M, YU M, SHEN X, QUAN J, HYUN L, SHIN H J, YOO M S

Two-dimensional (2D) material-based wiring conductive layer contact structure used in 2D material-based FET, comprises semiconducting 2D material wiring, conductive layer, and metallic 2D material layer in contact with semiconducting 2D material wiring and conductive layer.

LEE M, YOO M, SHIN H, SEOL M, SHIN H J, YOO M S, HYUN L

Optical sensor for light detection in wide spectral range, has source and drain electrodes formed on first graphene layer and semiconductor layer, without being electrically connected to barrier layer and first graphene layer, respectively.

CHO K W, LEE H C, YOO M S, CHUNG H J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X