国家/地区 中国（26）
IPC部 H（20） C（6）
IPC大类 H01（20） C01（4） C23（2）
IPC小类 H01L（17） C01B（4） C23C（2）
H01G（2）
IPC H01L021/336（11） H01L029/16（7） H01L021/28（5）
H01L029/78（5） C01B031/04（3） H01L029/10（3）
C23C016/01（2） C23C016/26（2） C23C016/56（2）
H01G011/32（2） H01G011/86（2） H01L021/04（2）
H01L021/285（2） H01L021/335（2） H01L029/786（2）
发明人 ZHANG D（26）
公开年 2016（10） 2015（7） 2013（5） 2017（4）
申请年 2016（10）  2014（7）  2013（5）  2017（4） 
专利权人 INST MICROELECTRONICS CHINESE ACAD SCI（26）

Growing patterned graphene comprises forming nickel layer on the surface of substrate for providing growth substrate of graphene, covering surface patterning template on the surface of nickel layer and generating graphene pattern.

ZHANG D, JIN Z, SHI J, PENG S, HUANG X, YAO Y

Floating graphene-silicon heterojunction transistor structure, has gate dielectric layer and gate electrode that are formed on graphene film which is in contact with portion of source and drain regions to form heterojunction.

JIN Z, YAO Y, HUANG X, SHI J, PENG S, ZHANG D

Graphene device manufacturing method involves testing metal electrode around self aligned metal layer, so as to partially cover self-aligned metal layer.

PENG S, JIN Z, ZHANG D, SHI J

Self-aligned graphene-based FET manufacturing method, involves forming photo-resist with photo-resist layer, forming gate electrode with photo-resist layer and gate structure, and generating source electrode and drain electrode.

JIN Z, HUANG X, YAO Y, PENG S, SHI J, ZHANG D

Method for reducing metal and graphene contact resistance in graphene FET device, involves providing insulating substrate with metal layer, and evaporating thin metal layer for performing detects treatment process on graphene material layer.

JIN Z, MAO D, PENG S, WANG S, SHI J, ZHANG D

Preparation of patterned graphene comprises forming photoresist layer on hydrophilic substrate surface by photolithography process, filling with oxidized graphene solution, drying, removing photoresist layer and reducing.

JIN Z, PENG S, ZHANG D, SHI J

Method for preparing graphene field effect transistor, involves transferring graphene material on substrate, preparing source and drain electrodes, performing photolithography followed by applying medium and forming graphene nanobelts.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for preparing metal graphene dual-sided contact structure for graphene electronic device, involves exposing photo-resist material, forming upper layer metal pattern, and forming self-aligned double-metal contact structure of graphene.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Method for manufacturing graphene field effect transistor, involves providing silicon substrate, forming insulating layer on silicon substrate, followed by forming leakage electrode on insulation layer, and forming graphene-based channel.

JIN Z, PENG S, ZHANG D, WANG S, SHI J, MAO D

Top gate graphene field effect transistor contains semiconductor substrate, insulation layer provided on semiconductor substrate, graphene conductive layer provided on insulating layer and comb-type source/drain contact structure.

JIN Z, PENG S, ZHANG D, SHI J