国家/地区 中国（15） 台湾（2） 美国（2）
IPC部 C（15）
IPC大类 C23（15）
IPC小类 C23C（15） C01B（5） C25D（3）
H01L（2）
IPC C23C016/26（15）
发明人 ZHANG Z（15）
公开年 2020（6） 2013（2） 2015（2）
申请年 2019（6）  2013（2）  2014（2）  2016（2） 
专利权人 CHINA DONGFA.（6）

Board comprises first copper foil, graphene layer and second copper foil, second copper foil is electroplated copper.

LIU K, DING Z, ZHANG Z, KOU J, HUANG Z, YUE X, CHEN Y, WANG E

Preparing low-temperature hydrophobic heat exchange material based on stainless steel and graphene comprises e. g. plating copper or nickel on surface of stainless steel and performing chemical plating or electroplating.

ZHANG Z, YANG D, HE P

Preparing graphene-coated copper alloy composite material involves cleaning copper alloy as base, then chemically removing impurities with dilute hydrochloric acid, cleaning and drying, and placing processed copper alloy.

ZHANG Z, YANG D, HE P

High temperature coating of graphene anticorrosive layer of copper alloy composite material comprises cleaning copper alloy surface, soaking in dilute hydrochloric acid, heating with hydrogen gas, decomposing and coating graphene.

ZHANG Z, YANG D, HE P

Preparing stainless steel composite material for condensation heat exchange, involves plating copper or nickel on the surface of stainless steel, using electroless plating or electroplating, preparing graphene hydrophobic coating.

ZHANG Z, YANG D, HE P

Graphene heat-dissipation film-containing alloy material used for e.g. heat-transfer component of electronic equipment, substrate made of copper alloy, iron alloy or aluminum alloy, and graphene film which covers surface of substrate.

ZHANG Z, YANG D, HE P

High temperature coating of graphene anti-corrosive layer on stainless steel composite material involves performing copper or nickel plating on steel surface, heating processed steel, passing gas and coating graphene on steel surface.

ZHANG Z, YANG D, HE P

Method of making a pellicle for use in extreme ultraviolet (EUV) lithography system, by depositing graphene layer over first material layer, and depositing amorphous silicon layer over graphene layer.

TU C, CHEN C, YOO C S, CHANG J, TSAI C, LIU P, LEE H, LIN C, LIN Y, TU Z, CHEN J, CAI J, YOU Q, ZHANG Z, LIN Z, LIU B, LI X, YOO C

Plasma growth of graphene by plasma enhanced chemical vapor deposition, involves putting quartz in cleaning solution, heating obtained product after soaking, and then cleaning obtained soaked product by using acetone and deionized water.

ZHANG Z, GUO L, DU Y, WANG B, GUO D

Method for preparation of epitaxial silicon carbide-graphene composite film, involves pre-treating substrate in chemical vapor deposition chamber, growing silicon carbide epitaxial layer, heating, decomposing and recombining structure.

ZHANG B, ZHANG X, ZHANG Z