国家/地区 美国（19）
IPC部 B（12） H（12） G（7）
C（6）
IPC大类 H01（12） B82（10） G01（6）
C12（4） C01（2）
IPC小类 H01L（12） B82Y（10） G01N（6）
C12Q（4） C01B（2）
IPC G01N033/487（6） H01L021/336（6） B82Y005/00（4）
C12Q001/68（4） H01L029/16（4） B82Y015/00（3）
B82Y030/00（3） B82Y040/00（3） B82Y099/00（3）
G01N027/62（3） H01L029/78（3） G01N027/327（2）
H01L021/20（2） H01L021/28（2） H01L029/66（2）
发明人 ZHU W（19）
公开年 2013（7） 2014（3） 2012（2） 2015（2） 2017（2）
申请年 2012（10）  2013（2） 
专利权人 INT BUSINESS.（16） GLOBALFOUNDR.（2） PENG H（2） STOLOVITZKY .（2）
ZHU W（2）

Classifier circuit used to form graphene classifier transistor, comprises array of dual gate graphene transistors having e.g. source, top gate and drain, and common output combining output current of dual gate graphene transistors.

ZHU W, LIU J, RYU H

Electrically differentiating bases comprises providing a reservoir structure comprising a nanopore which is formed through the membrane having a graphene layer and using transistor current flowing through the graphene transistor.

PENG H, STOLOVITZKY G A, ZHU W

Semiconductor device for electronic application e.g. personal computer, has first insulating layer that is formed over first portion of first graphene layer.

YANG T, BAO T, LIN T, CHU W, YANG D, ZHU W

Manufacture of structure-controllable three-dimensional graphene porous material involves preparing porous metal structure, heating, cooling, performing sand blasting, growing graphene film, washing and drying.

SHI Y, YAN C, ZHU W

Sequencing method for nanodevice involves determining identification of particular base according to individual electrical currents repeatedly measured for particular base moving from first graphene layer through last graphene layer.

ZHU W

Apparatus for sequencing molecules, has electrodes that is individually addressed to each of graphene layers and applies individual voltages to each of graphene layers on one to one basis when particular base of molecule is in nanopore.

ZHU W

Method useful for biomolecular sensing and DNA sequencing involves configuring reservoir with membrane having nanopore; filling nanopore and reservoir with ionic buffer; forming graphene transistor to pass current though nanopores.

PENG H, STOLOVITZKY G A, ZHU W

Method for representing data in e.g. compact disk-ROM of mainframe computer, involves applying first voltage to back gate of graphene-based memory device and second voltage to graphene layer, which is bent into opening of insulation layer.

ZHU W

Forming method for semiconductor device, e.g. complementary metal oxide semiconductor (CMOS) integrated circuits involves forming fuse that includes graphene layer and electrically connected to FET.

ZHU W

Semiconductor device, e.g. electronic fuse, for integrated circuit, has fuse, which includes graphene layer, that is electrically connected to source terminal in substrate of FET.

ZHU W