国家/地区 美国（8） 世界知识产权组织（6） 韩国（5） 中国（3） 欧洲专利局（EPO）（2） 日本（2） 台湾（2）
IPC部 C（11） H（7） B（6）
IPC大类 C01（11）
IPC小类 C01B（11） C23C（11） H01L（7）
B82Y（4） B32B（3） H01B（3）
C04B（2） C30B（2） H05K（2）
IPC C01B021/064（11）
发明人
公开年 2021（3） 2013（2） 2016（2）
申请年 2011（2）  2021（2） 
专利权人 SAMSUNG ELEC.（2）

Digital formation of two-dimensional materials structures used for electronic components, involves generating donor substrates containing back surface and front surface, applying coating to front surface, and irradiating coating containing donor material.

ZERGIOTI I, PAPAZOGLOU S, ZACHARATOS F, LOGOTHETI A, PESQUERA A, ZURUTUZA A, NAVEH D

Producing two-dimensional material-polymer composite useful in transparent electrode, sensor, memory and solar cell, comprises e.g. forming monomer layer interposed between first and second two-dimensional material layer.

SUK S H, YUNE S I

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Semiconductor device e.g. monolithic three-dimensional integrated circuit, has microelectronic components embedded in single crystalline dielectric material, where material contains carbon with diamond structure or hexagonal boron nitride.

CLARK R D, CLARK R

Seamless hexagonal boron nitride atomic monolayer thin film used for fabricating graphene device, has pseudo-single crystal structure having seamlessly merged boron nitride grains having preset dimension.

SUH H, SONG Y, WU Q, LEE S, KIM M, PARK S, KIM M W, LEE S J, PARK S W, SONG Y J, SUH H S

Manufacturing method of graphene laminated structure, involves setting film thickness of iron carbide film more than thickness of boron nitride layer.

OSHIMA H

Production of two-dimensional nanomaterial e.g. graphene used in electronic device, involves forming two-dimensional nanomaterial on liquid surface containing molten eutectic compound, of substrate by chemical vapor deposition.

BABENKO V, GROBERT N

Preparing multilayer article from semiconductor substrate involves forming metal film on front of substrate; forming layer of boron nitride; and forming layer of graphene between substrate and the back metal film surface.

SEACRIST M R, BERRY V, NGUYEN P T

Manufacturing graphene co-extruded film, comprises forming hexagonal boron nitride layer in upper side of substrate, forming metal catalytic layer, forming top graphene layer, and removing metal catalytic layer and top graphene layer.

KIM H K, YANG W S, GEUN K H, SEOK Y U

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X