国家/地区 中国（5） 韩国（4） 美国（3） 英国（2） 日本（2） 世界知识产权组织（2）
IPC部 C（10）
IPC大类 C01（10）
IPC小类 C01B（10）
IPC C01B032/186（10）
发明人 BYUN K（2） BYUN K E（2） CHO Y（2）
CHO Y C（2） SHIN H（2） SHIN H J（2）
SHIN K（2） SHIN K W（2） SONG H（2）
SONG H J（2）
公开年 2019（5） 2020（3） 2018（2）
申请年 2018（10）
专利权人 SAMSUNG ELEC.（2）

Preparing multi-edge graphene comprises removing oxide layer and connecting nickel particles, growing graphene on the sheet surface of nickel particles, covering a layer of polymethyl methacrylate, removing metallic nickel and PMMA.

LU B

Formation of nanocrystalline graphene used for semiconductor device, involves arranging substrate in chamber, forming protective layer, injecting reaction gas, generating plasma, and growing nanocrystalline graphene on protective layer.

JUNG A, SHIN K, BYUN K, SHIN H, LIM H, NAM S, SONG H, CHO Y, JUNG A R, SHIN K W, BYUN K E, SHIN H J, LIM H S, NAM S G, SONG H J, CHO Y C

Interconnect structure for use in electronic device, has cap layer provided on surface of conductive wiring and which includes nanocrystalline graphene comprising nano-sized crystals.

BYUN K, SHIN K, KIM Y, SHIN H, SONG H, LEE C, KIM C, CHO Y, BIAN Q, SHEN J, JIN Y, SHEN X, SONG X, LI C, JIN C, ZHAO L, BYUN K E, SHIN K W, HUN K Y, SHIN H J, SONG H J, LEE C S, CHO Y C

Manufacturing graphene directly on a substrate without transfer process used in semiconductore devices involves forming a catalyst layer on the substrate, using chemical vapor deposition to inject a carbon compound onto the catalyst layer.

HAM M, SON M W

Manufacture of graphene-based device used for e.g. gas sensor, involves providing graphene assembly, transferring graphene assembly to substrate, using photolithography and removing UV barrier layer and photoresist layer.

MIGLIORATO M, KUMAR R, MONTEVERDE U

Transparent electrode used in solar cell, comprises transparent substrate, and composite layer comprising graphene layer and nanoparticles which are embedded in graphene layer, placed on transparent substrate.

MAAROUF A A, ELSAYED K A M

Graphene-containing structure used for e.g. semiconductor device, comprises silicon carbide semiconductor layer, graphene layer on semiconductor layer, and aluminum nitride layer provided between semiconductor layer and graphene layer.

WU P T, YOSHIDA M, KIMURA S, MIYAZAKI H, YAMAZAKI Y

Array of graphene sheets used to generate electricity from flow of ion-containing fluid, comprises graphene sheets each comprising electrical contacts having surface extending between them.

GUINEY I, THOMAS S

Graphene-modified printed circuit board (PCB) clad plate comprises polytetrafluoroethylene (PTFE)-based prepreg, copper foil and layer of chemical vapor deposited graphene is provided between the PTFE-based prepreg and copper foil.

ZHANG J, XU Y, ZHANG Y, WANG Q

Preparing graphene coated tricobalt tetraoxide powder comprises e.g. tiling tricobalt tetraoxide base powder, evacuating, introducing argon, hydrogen, and methane, turning on microwave plasma, cooling non-oxidizing gas and introducing air.

YANG L, DUAN Y, GUO S, FENG S, PENG J, HOU M, WANG L, LIU H